Low power cryogenic switch
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Solution Overview
Problem
Current data processing technologies face challenges in achieving low power consumption during data transfer between integrated circuit devices, particularly when operating across different temperature domains, leading to significant power dissipation and thermal issues.
Innovation Solution
The implementation of a remotely-controlled cryogenic switch using metal-oxide semiconductor (MOS) devices in a superconducting environment, where configuration control signals from a warmer domain directly control switching circuitry without intermediate buffering, enabling efficient data transfer with reduced power dissipation by leveraging the low leakage and threshold voltage characteristics of MOS devices at superconducting temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If data transfer is performed between integrated circuit devices across different temperature domains using conventional switching circuitry, then data transfer capability is achieved, but power dissipation increases significantly
Solution Approach 1:
The patent changes the operating temperature parameter of the switching circuitry from conventional temperatures to cryogenic temperatures (below 10K). This parameter change exploits the physical properties of MOS devices at cryogenic temperatures, where leakage current is dramatically reduced and threshold voltage is lowered, enabling low-power operation while maintaining reliable data transfer between warmer domain processors
Solution Approach 2:
The patent introduces a cryogenic switching circuit as an intermediary component between warmer domain data processors. This intermediary switch circuit receives data from warmer domain inputs, routes it through the cryogenic domain where power dissipation is minimal, and delivers it to warmer domain outputs, thereby isolating the high-power processing operations from the low-power switching operations
2Temperature
If conventional switching circuitry is used for data transfer, then data routing capability is achieved, but thermal transfer and cooling requirements increase
Solution Approach 1:
The patent changes the temperature parameter of the switching environment to cryogenic levels (below 10K), where the thermal energy is so low that leakage currents and thermal noise are minimized. This enables the switch circuit to operate with minimal cooling power while maintaining high data transfer efficiency, as the cold environment naturally suppresses thermal effects that would otherwise require active cooling management
3Use of energy by moving object
If MOS devices are used at superconducting temperatures, then power dissipation is reduced, but device complexity increases
Solution Approach 1:
The patent changes the temperature parameter to cryogenic levels, which fundamentally alters the electrical characteristics of MOS devices. At these temperatures, leakage current becomes negligible and threshold voltage decreases, allowing for simpler circuit designs that achieve low power dissipation without requiring complex compensation circuits or additional control mechanisms
Solution Approach 2:
The cryogenic environment provides self-service benefits by naturally suppressing leakage currents and thermal noise without requiring additional active cooling or compensation circuits. The low temperature itself serves as the mechanism for reducing power dissipation, eliminating the need for complex thermal management systems or additional power-consuming components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach dramatically reduces power dissipation and thermal transfer by minimizing the need for cooling, allowing for efficient data transfer between warmer and colder temperature domains with minimal power consumption, thereby addressing the limitations of existing technologies.
Implementation Method 1
The switching circuitry is implemented by metal-oxide semiconductor (MOS) devices directly connected to data and control signal interconnect pads of the integrated circuit die... the integrated circuit die (referred to herein as the switch die or switch chip) is designed for operation within a superconducting cryogenic environment (e.g., below approximately 10 Kelvin... and more specifically below the ~5K boiling point of liquid Helium)... leveraging the negligible leakage and exceedingly low threshold voltage of MOS devices at superconducting temperature
Data Source
AI summary
An signal switching integrated-circuit die includes an array of switch cells, control signal contacts, data input contacts and data output contacts. Switch control signals are received from an external control-signal source via respective control signal contacts, inbound data signals are received from one or more external data-signal sources via respective data input contacts and outbound data signals are conveyed to one or more external data-signal destinations via respective data output contacts. The array of switch cells receives the control signals directly from the control signal contacts and response to the control signals by switchably interconnecting the data input contacts with selected ones of the data output contacts.