Low-Refractivity Polymer Grid for BSI Sensor Cross-Talk

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Solution Overview

Problem

Existing semiconductor image sensors, particularly Backside Illumination (BSI) CMOS image sensors, face challenges in maximizing Quantum Efficiency (QE) due to light reflection and cross-talk issues, which affect image quality.

Innovation Solution

A low-refractivity grid structure is introduced in BSI image sensors, comprising a polymer grid with lower refractivity than color filters, which reflects light through total reflection and reduces cross-talk by aligning grid structures vertically and ensuring a refractivity difference for effective light confinement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If conventional grid structures with higher refractivity materials are used in BSI image sensors, then light reflection is reduced, but cross-talk between adjacent pixels increases and Quantum Efficiency decreases

Engineering Contradiction:
Improvelight reflectionVSAvoidcross-talk
Core Design Contradiction:
Object-affected harmful factorsVSObject-generated harmful factors

Solution Approach 1:

The patent changes the refractivity parameter of the grid structure material to be lower than that of the color filter, which fundamentally alters the optical interaction. This parameter change enables total internal reflection at the grid-color filter interface, simultaneously reducing light reflection from the grid while preventing cross-talk through the refractivity difference that confines light to specific pixel regions.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent converts the potentially harmful effect of light reflection into a beneficial total internal reflection mechanism. By designing the grid with lower refractivity than the color filter, the interface becomes a reflective boundary that guides light into the photodiode region, transforming what would normally be a lossy reflection into a useful light-confining mechanism that reduces both external reflection and cross-talk.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Ease of manufacture

If grid structures and color filters are formed without precise refractivity control, then manufacturing is simpler, but delamination occurs between grid structures and color filters

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidadhesion between grid structures and color filters
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent introduces refractivity as a critical control parameter in the material selection process. By specifying that the grid structure material must have lower refractivity than the color filter material, the patent creates a clear material selection criterion that simultaneously ensures optical performance and prevents delamination, transforming a complex adhesion problem into a straightforward material parameter control.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If vertical alignment of grid structures is not ensured, then manufacturing tolerance is easier to achieve, but light confinement and cross-talk reduction effectiveness decreases

Engineering Contradiction:
Improvevertical alignment precisionVSAvoidcross-talk
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent makes vertical alignment a critical design parameter that directly impacts optical performance. By ensuring the grid structure is vertically aligned with the color filter and photodiode, the patent optimizes the total internal reflection geometry and light confinement, thereby maximizing cross-talk reduction effectiveness while maintaining manufacturability through standard alignment techniques.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances Quantum Efficiency by minimizing light reflection and cross-talk, thereby improving image quality and reducing delamination risks between grid structures and color filters.

Implementation Method 1

the color filters have higher refractivity values than the low-refractivity grid, and light may be reflected from the sidewalls of the low-refractivity grid through total reflection

Methodology Applied
Scientific EffectTotal internal reflection: Total Internal Reflection

Data Source

PatentUS20250301811A1Low-refractivity grid structure and method forming same
Publication Date: 2025.09.25 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250301811A1 patent drawing
  • US20250301811A1 patent drawing
  • US20250301811A1 patent drawing

AI summary

A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.