Low-Resistivity Inorganic Particle Dispersed Sputtering Target
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Solution Overview
Problem
Inorganic particles with high electric resistivity in sputtering targets for magnetic recording media tend to become charged during sputtering, leading to arcing and particle discharge, which significantly deteriorates the production yield of thin films in magnetron sputtering devices with DC power sources.
Innovation Solution
The development of an inorganic-particle-dispersed sputtering target with inorganic particles having an electric resistivity of 1×10^1 Ω·m or less, dispersed in a metal or alloy base material with specific compositions, and optimized dimensions and shapes to minimize charging and arcing during sputtering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If inorganic particles with high electric resistivity (such as SiO2) are used in the sputtering target, then the magnetic recording medium can be produced with improved magnetic properties, but the particles become charged during sputtering causing arcing and particle discharge that deteriorates production yield
Solution Approach 1:
The patent changes the electrical resistivity parameter of the inorganic particles from high (e.g., SiO2 with resistivity >10^12 Ω·m) to low (≤10^1 Ω·m) by selecting specific materials like metal oxides (Fe2O3, Fe3O4, WO2, Nb2O5, Ti2O3, TiO2), nitrides (TiN, TaN, WN), or carbides. This parameter change prevents charge accumulation during sputtering, eliminates arcing, and maintains production yield while preserving the magnetic recording medium's improved magnetic properties.
2Reliability
If inorganic particles are dispersed in the alloy base material to improve magnetic properties, then the magnetic interaction between particles is blocked, but the particles are discharged from the target surface during sputtering due to charging
Solution Approach 1:
The patent changes the electrical resistivity parameter of the inorganic particles to ≤10^1 Ω·m, which fundamentally alters their charge accumulation behavior during sputtering. This prevents the harmful discharge effect while maintaining the beneficial magnetic interaction blocking function, as the low-resistivity particles no longer accumulate charge to the extent that causes arcing and particle ejection.
3Ease of manufacture
If conventional inorganic particles (like SiO2) are used in the sputtering target, then the target can be manufactured with standard materials, but arcing occurs frequently during sputtering with DC power source
Solution Approach 1:
The patent changes the electrical resistivity parameter from high (SiO2: >10^12 Ω·m) to low (≤10^1 Ω·m) by selecting alternative materials such as metal oxides (Fe2O3, Fe3O4, WO2, Nb2O5, Ti2O3, TiO2), nitrides (TiN, TaN, WN), or carbides. These low-resistivity materials are still manufacturable with standard powder metallurgy processes but eliminate arcing during sputtering operation.
Solution Approach 2:
The patent uses composite materials consisting of alloy base material (Co, Co-Cr, Co-Pt, Co-Cr-Pt) combined with low-resistivity inorganic particles (metal oxides, nitrides, or carbides). This composite structure maintains the manufacturing advantages of conventional targets while eliminating the arcing problem through the specific material selection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces arcing occurrences and improves the yield of thin film production by ensuring that inorganic particles are less charged, thereby enhancing the efficiency of the sputtering process.
Implementation Method 1
inert gas is ionized, plasma consisting of electrons and positive ions is formed
Implementation Method 2
inorganic particles with large electric resistivity such as SiO2 become charged by colliding with the ionized inert gas atomic ions
Implementation Method 3
When electric charge is further concentrated on these inorganic particles, breakdown will occur and arcing will arise
Implementation Method 4
the positive ions in this plasma collide with the target (negative electrode) surface to knock out the constituent atoms of the target, and the extruded atoms adhere to the opposing substrate surface to form a film
Data Source
AI summary
Provided is an inorganic-particle-dispersed sputtering target in which inorganic particles are dispersed in a Co base material, wherein the inorganic particles have an electric resistivity of 1×101 Ω·m or less and the volume ratio of the inorganic particles in the target is 50% or less. The sputtering target thus adjusted is advantageous in that, when sputtering is performed using a magnetron sputtering device comprising a DC power source, the inorganic particles are less charged, and arcing occurs less frequently. Accordingly, by using the sputtering target of the present invention, the occurrence of particles attributable to the arcing reduces, and a significant effect of improving the yield in forming a thin film is obtained.