Low Static Current Semiconductor Driving Circuit

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Solution Overview

Problem

Existing semiconductor devices face challenges in efficiently driving power transistors with minimal static current and maintaining a driving voltage equal to the source voltage, particularly in high-voltage applications using HEMTs and MOSFETs.

Innovation Solution

The semiconductor device incorporates a charge pump circuit and a bootstrap circuit, which generate voltages greater than the source voltage to drive the power transistor, utilizing a combination of HEMTs and MOSFETs in a configuration that minimizes static current and ensures the driving voltage is substantially equal to the source voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a charge pump circuit and bootstrap circuit are used to generate voltages greater than the source voltage, then the power transistor can be driven effectively, but the device complexity increases

Engineering Contradiction:

Improvepower transistor driving effectivenessVSAvoidcircuit complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the charge pump circuit and bootstrap circuit into an integrated driving circuit configuration that works together to generate the required gate driving voltage. This merging approach allows the circuits to share components and coordination mechanisms, reducing overall complexity compared to separate implementations while maintaining the ability to effectively drive the power transistor.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The driving circuit uses dynamic voltage generation through the charge pump and bootstrap mechanisms, where the gate driving voltage is generated on-demand rather than being a fixed voltage. This dynamic approach allows the circuit to adapt to different operating conditions of the power transistor while using minimal static current, resolving the contradiction between effective driving and circuit simplicity.

Inventive Principle:

Principle #15Dynamics

2Loss of energy

If HEMTs and MOSFETs are used in combination to minimize static current, then power consumption is reduced, but the manufacturing precision requirements increase

Engineering Contradiction:

Improvestatic current consumptionVSAvoiddevice fabrication precision

Core Design Contradiction:

Loss of energyVSManufacturing precision

Solution Approach 1:

The patent applies different transistor types (HEMTs and MOSFETs) in specific locations within the driving circuit based on their individual characteristics. HEMTs are used where high electron mobility is needed for low static current, while MOSFETs are used in other stages. This local optimization allows the circuit to achieve minimal static current consumption while managing manufacturing precision requirements through targeted device selection rather than uniform high-precision requirements across all components.

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS10924107B2Low static current semiconductor device

Publication Date: 2021.02.16 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.