Low Stray Inductance Power Module with Segmented Metallization

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional IGBT power module designs sacrifice efficiency due to high stray inductance, which is increased by separating DC paths and repetitive layouts to enhance power density and manufacturing ease.

Innovation Solution

The power module incorporates a substrate with patterned metallization segmented into spaced apart regions, featuring mirrored power transistor circuits and grooves that reduce stray inductance by counteracting magnetic fields and optimizing current loop design.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If DC paths are separated and repetitive layouts are used to enhance power density, then power density increases, but stray inductance increases and efficiency decreases

Engineering Contradiction:
Improvepower densityVSAvoidstray inductance
Core Design Contradiction:
PowerVSLoss of energy

Solution Approach 1:

The metallization pattern is segmented into multiple regions separated by grooves, allowing independent optimization of each segment's electrical path while maintaining overall power density. This segmentation enables separate control of current flow paths to minimize inductance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The power transistor circuits are arranged in a mirrored asymmetric configuration rather than repetitive symmetric layouts. This asymmetric arrangement optimizes current loop areas and minimizes stray inductance while maintaining manufacturing feasibility.

Inventive Principle:
Principle #4Asymmetry

2Ease of manufacture

If conventional power module designs are used to increase power density, then manufacturing ease improves, but stray inductance increases

Engineering Contradiction:
Improvemanufacturing easeVSAvoidstray inductance
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The substrate metallization is divided into segmented regions with grooves between them, allowing modular assembly and simplified manufacturing processes while enabling optimized current paths that reduce stray inductance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The design transitions from planar repetitive layouts to a three-dimensional mirrored configuration with grooves providing vertical separation, enabling reduced current loop areas without compromising manufacturing ease.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively minimizes stray inductance within and outside the power module, enhancing efficiency and power extraction by counteracting magnetic fields and optimizing current loop configurations.

Implementation Method 1

mirrored power transistor circuits and grooves that reduce stray inductance by counteracting magnetic fields

Methodology Applied
Scientific EffectMagnetic field counteraction: Magnetic Field

Data Source

PatentUS8637964B2Low stray inductance power module
Publication Date: 2014.01.28 INFINEON TECHNOLOGIES AG
  • US8637964B2 patent drawing
  • US8637964B2 patent drawing
  • US8637964B2 patent drawing

AI summary

A power module includes a substrate including an insulating member and a patterned metallization on the insulating member. The patterned metallization is segmented into a plurality of spaced apart metallization regions. Adjacent ones of the metallization regions are separated by a groove which extends through the patterned metallization to the insulating member. A first power transistor circuit includes a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region. A second power transistor circuit includes a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side. The second power transistor circuit mirrors the first power transistor circuit.