Low Temperature Deposition Apparatus for OLED Organic Layer Protection
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Solution Overview
Problem
Conventional thermal deposition processes for OLED displays often damage organic layers when co-evaporating inorganic metal layers at high temperatures, limiting the co-deposition of these layers and requiring multiple organic layers and buffer layers to prevent damage.
Innovation Solution
A low temperature deposition device with a thermal deposition source unit, differential pumping unit, and cooling gas inlet to cool the deposition beam, allowing for the formation of a low temperature inorganic metal layer that minimizes damage to organic layers and enables simultaneous deposition of organic and inorganic beams to form an organic/inorganic mixture layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If inorganic metal layer is deposited at high temperature through thermal deposition process, then deposition efficiency is improved, but organic layer is damaged
Solution Approach 1:
The deposition chamber is divided into multiple vacuum stages (first high vacuum unit, low vacuum unit, second high vacuum unit) separated by boundary walls with deposition holes. This segmentation allows the inorganic metal layer to be deposited at high temperature in the first high vacuum unit while the organic layer in the second high vacuum unit remains protected from thermal damage.
Solution Approach 2:
A cooling gas (such as nitrogen or helium) is introduced into the low vacuum unit to cool the deposition beam of inorganic metal atoms passing through it. This cooling gas acts as an intermediary that reduces the temperature of the high-energy metal atoms before they reach the organic layer, preventing damage while maintaining deposition efficiency.
2Device complexity
If inorganic metal layer and organic layer are co-evaporated, then manufacturing process is simplified, but organic layer is easily changed
Solution Approach 1:
The system separates the deposition processes spatially through multiple vacuum chambers and temporally through controlled beam timing. The inorganic metal beam and organic material beam are deposited separately in different vacuum units and can be controlled independently, allowing co-deposition without compromising organic layer stability.
Solution Approach 2:
The vacuum pressure is varied across different chambers (high vacuum, low vacuum, high vacuum) and the temperature of the deposition beam is changed by introducing cooling gas. These parameter changes enable simultaneous deposition of inorganic and organic materials while maintaining organic layer stability.
3Object-affected harmful factors
If multiple organic layers and buffer layers are applied to prevent organic layer damage, then organic layer protection is improved, but device complexity increases
Solution Approach 1:
The cooling gas in the low vacuum unit serves as an intermediary protective mechanism that prevents high-temperature inorganic metal atoms from damaging the organic layer. This physical cooling mechanism replaces the need for multiple protective organic layers and buffer layers, simplifying the overall structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The low temperature deposition device prevents organic layer damage and allows for the formation of an organic/inorganic mixture layer with improved characteristics by depositing inorganic metal layers at low temperatures, enhancing the manufacturing process for OLED displays.
Implementation Method 1
a cooling gas inlet connected to the differential pumping unit and inserting a cooling gas inside the differential pumping unit so as to cool the deposition beam
Implementation Method 2
a thermal deposition source unit spraying a deposition beam
Implementation Method 3
a differential pumping unit connected to the thermal deposition source unit and passing the deposition beam
Data Source
AI summary
A low temperature deposition device according to the present invention includes: a thermal deposition source unit spraying a deposition beam; a differential pumping unit connected to the thermal deposition source unit and passing the deposition beam; and a cooling gas inlet connected to the differential pumping unit and inserting a cooling gas inside the differential pumping unit to cool the deposition beam. According to the present invention, the inorganic deposition beam of low temperature is deposited on the substrate to form the inorganic metal layer of low temperature so that the damage to the organic layer may be minimized when forming the inorganic metal layer of low temperature on the organic layer.