Low Temperature Ion Implantation Throughput Optimization
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Solution Overview
Problem
The existing low temperature ion implantation processes are time-consuming due to the separation of cooling and heating processes from the implant process, limiting throughput and requiring several seconds to minutes to cool and heat the substrate, which affects the efficiency and uniformity of the ion implantation.
Innovation Solution
The proposed method involves overlapping the cooling and heating processes with the implant process, allowing simultaneous temperature adjustment and ion implantation, thereby reducing the overall processing time and improving throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the cooling process and heating process are separated from the implant process, then the implantation quality is ensured, but the processing time increases significantly
Solution Approach 1:
The patent merges the cooling process, heating process, and implant process into a single integrated process. The substrate is cooled below the freezing point of water, then the implant process and heating process are performed simultaneously, eliminating the need for separate cooling and heating steps while maintaining implantation quality through controlled temperature management.
Solution Approach 2:
The patent implements continuous useful action by overlapping the implant process with both cooling and heating operations. The substrate undergoes cooling, implantation, and heating in a continuous sequence without idle transitions, maximizing equipment utilization and reducing total processing time while maintaining precise temperature control throughout the process.
2Manufacturing precision
If the substrate is cooled to below freezing point of water, then shallow junctions are formed, but water condensation may occur on substrate surface
Solution Approach 1:
The patent applies preliminary action by heating the substrate after the implant process begins, rather than waiting until the end. This post-implant heating prevents water condensation on the substrate surface that would otherwise occur when the substrate is cooled below the freezing point of water, while still achieving the desired shallow junction formation during the implantation process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the efficiency and uniformity of low temperature ion implantation by reducing the time required for cooling and heating, thereby improving the throughput and maintaining the quality of the implantation process.
Implementation Method 1
during the implant process (from ti to th), the substrate is heated by the ion beam energy
Implementation Method 2
cooled by a cooling mechanism, such as a backside cooling gas
Data Source
AI summary
Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.