Low-Temperature Oxide Deposition for FinFETs
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing multiple gate field-effect transistors (MuGFETs) like FinFETs, where high-temperature oxide growth processes can lead to over-consumption of fin materials, affecting channel region narrowing and device performance, especially for fins with compound semiconductor materials like SiGe.
Innovation Solution
A low-temperature oxide deposition process followed by post-treatment using plasma and UV light exposure is employed to form a protective oxide layer over FinFET fins, preventing material consumption and maintaining channel strain, with the oxide serving as a barrier against further oxidation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature oxide growth processes are used, then oxide layer formation is achieved, but fin material consumption increases and channel width is reduced
Solution Approach 1:
The patent changes the temperature parameter from high-temperature growth to low-temperature deposition (below 400°C), fundamentally altering the process conditions to achieve oxide formation without fin material consumption. This parameter change resolves the contradiction by enabling oxide layer formation through a different physical mechanism (deposition rather than growth) that does not require high temperatures and consequently does not consume the fin material.
Solution Approach 2:
The patent replaces the thermal field (high-temperature growth mechanism) with a chemical vapor deposition process operating at low temperatures. This substitution changes the fundamental mechanism from thermally-driven oxide growth to chemically-driven oxide deposition, eliminating the harmful thermal effects that cause fin material consumption while maintaining oxide layer formation.
2Reliability
If high-temperature processes are used, then oxide formation is achieved, but channel strain is reduced and device performance deteriorates
Solution Approach 1:
The patent changes the temperature parameter from high-temperature processes to low-temperature deposition (below 400°C), fundamentally altering the process conditions to achieve oxide formation without fin material consumption. This parameter change resolves the contradiction by enabling oxide layer formation through a different physical mechanism (deposition rather than growth) that does not require high temperatures and consequently does not consume the fin material.
Solution Approach 2:
The patent replaces the thermal field (high-temperature growth mechanism) with a chemical vapor deposition process operating at low temperatures. This substitution changes the fundamental mechanism from thermally-driven oxide growth to chemically-driven oxide deposition, eliminating the harmful thermal effects that cause fin material consumption while maintaining oxide layer formation.
3Loss of substance
If low-temperature oxide deposition is used, then fin material consumption is prevented, but oxide layer quality may be compromised
Solution Approach 1:
The patent introduces an intermediary protective layer (such as a nitride layer or other barrier material) between the fin structure and the oxide deposition process. This intermediary layer prevents direct interaction between the deposition process and the fin material, allowing low-temperature deposition to proceed without consuming the fin material while ensuring oxide layer formation occurs on the protective intermediary rather than directly on the fin structure.
Solution Approach 2:
The patent replaces the thermal field (high-temperature growth mechanism) with a chemical vapor deposition process operating at low temperatures. This substitution changes the fundamental mechanism from thermally-driven oxide growth to chemically-driven oxide deposition, eliminating the harmful thermal effects that cause fin material consumption while maintaining oxide layer formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the formation of high-quality oxide layers at lower temperatures, preventing fin material consumption and maintaining channel width, thereby enhancing the reliability and performance of FinFET devices without the need for high-temperature processes like ISSG, ensuring comparable reliability across input/output and core device regions.
Implementation Method 1
an oxide is formed over fins of FinFETs of a semiconductor device using a low temperature deposition process
Implementation Method 2
The oxide is post-treated with a low temperature process
Implementation Method 3
post-treatment using plasma and UV light exposure
Data Source
AI summary
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a substrate, the substrate includes a first fin, a second fin, and an isolation region disposed between the first fin and the second fin. The second fin includes a different material than a material of the substrate. The method includes forming an oxide over the first fin, the second fin, and a top surface of the isolation region at a temperature of about 400 degrees C. or less, and post-treating the oxide at a temperature of about 600 degrees C. or less.