Low-Temperature SiCN:H PECVD for Stable 3D Bonding Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing surface activated bonding techniques for 3D integration of devices require high temperatures, which are unsuitable for substrates with low thermal budgets, leading to poor bond strength and stability issues due to oxygen absorption, especially when using SiCN:H films deposited at lower temperatures.
Innovation Solution
A method for depositing hydrogenated silicon carbon nitride (SiCN:H) films using plasma enhanced chemical vapour deposition (PECVD) at temperatures below 200°C, utilizing silane, a hydrocarbon gas, nitrogen, and hydrogen as reactive precursors, which produces stable films suitable for adhesion layers in surface activated bonding processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high temperature deposition (340-370°C) is used for SiCN:H bonding layers, then bond strength and film stability are improved, but substrates with low thermal budget constraints are damaged
Solution Approach 1:
The patent changes the deposition temperature parameter from conventional high temperatures (340-370°C) to low temperatures (25-150°C), and modifies the precursor chemistry from organosilane to silane-based systems to enable stable SiCN:H film formation at low temperatures without compromising bond strength
Solution Approach 2:
The patent utilizes plasma phase transitions (RF-powered plasma generation) to enable chemical vapor deposition at low substrate temperatures, where the plasma provides the necessary activation energy without requiring high thermal budgets
2Temperature
If low temperature deposition (200°C) is used for SiCN:H bonding layers, then thermal budget constraints are satisfied, but bond strength and film stability deteriorate due to oxygen absorption
Solution Approach 1:
The patent employs plasma environment as an inert atmosphere during deposition that prevents oxygen absorption and oxidation of the SiCN:H film, maintaining film stability and bond strength at low deposition temperatures without requiring post-deposition annealing
Solution Approach 2:
The patent uses plasma as an intermediary medium that enables low-temperature deposition while simultaneously protecting the film from oxygen absorption, acting as both the deposition mechanism and the protective environment
3Temperature
If conventional organosilane precursors (3MS/4MS) are used at low temperature, then deposition temperature is reduced, but film quality degrades with poor adhesion and high moisture sensitivity
Solution Approach 1:
The patent changes the precursor chemistry from organosilane (3MS/4MS) to silane-based precursors, fundamentally altering the deposition chemistry to produce stable SiCN:H films at low temperatures with improved adhesion and reduced moisture sensitivity
Solution Approach 2:
The patent creates a composite film structure (SiCN:H) with specific hydrogen content and stoichiometry controlled through precursor selection and plasma parameters, achieving a material composition that inherently resists moisture and provides strong adhesion at low deposition temperatures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the deposition of SiCN:H films with improved bond strength and stability, suitable for temperature-sensitive substrates, maintaining low thermal budgets and ensuring compatibility with various substrates for 3D integration.
Implementation Method 1
method of depositing a hydrogenated silicon carbon nitride (SiCN:H) film onto a substrate by plasma enhanced chemical vapour deposition (PECVD)
Implementation Method 2
sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD
Data Source
AI summary
According to the present invention there is provided a method of depositing a hydrogenated silicon carbon nitride (SiCN:H) film onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising the steps of: providing the substrate in a chamber; introducing silane (SiH4), a hydrocarbon gas or vapour, nitrogen gas (N2), and hydrogen gas (H2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD at a process temperature of less than about 200° C.