Low-Temperature SiO2 Deposition for High-Density Semiconductor Films
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Solution Overview
Problem
Forming high-quality SiO2 films at high temperatures is challenging due to constraints on thermal budget, which can lead to issues with film thickness uniformity and coverage, and requires forming a large number of Si—Si bonds, making it difficult to achieve high density and low contraction degrees.
Innovation Solution
A method involving the use of aminosilane-based gas and another silane-based gas with a lower thermal decomposition temperature, along with an oxidant, is employed in an atomic layer deposition process to form a high-quality SiO2 film at low temperatures, allowing for the formation of Si—Si bonds and achieving high density and low contraction degrees.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high temperature processing is used to form SiO2 film, then film quality is improved, but thermal budget constraints are violated and processing complexity increases
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using aminosilane-based gas instead of conventional silane gases. This chemical substitution allows the formation of high-quality SiO2 films with high density and low contraction at lower temperatures, resolving the contradiction between film quality and processing temperature.
Solution Approach 2:
The patent employs a composite gas system combining aminosilane-based gas with specific oxidants. This composite approach enables the formation of Si-Si bonds during deposition, achieving high film density and low contraction without requiring high temperature processing, thus resolving the quality-temperature contradiction.
2Manufacturing precision
If conventional silane-based gas is used, then SiO2 film is formed, but high density and low contraction degrees are difficult to achieve
Solution Approach 1:
The patent changes the chemical composition parameter by using aminosilane-based gas containing Si-H bonds. This enables the formation of Si-Si bonds during the deposition process, achieving high film density and low contraction degrees while maintaining ease of manufacture through standard ALD processes.
3Manufacturing precision
If aminosilane-based gas is used, then high density SiO2 film is formed, but gas cost increases
Solution Approach 1:
The patent applies local quality by using aminosilane-based gas specifically during the silicon source deposition step where Si-Si bond formation is critical for density, while using conventional oxidants and standard ALD cycling for other process steps. This targeted approach achieves high film density while controlling overall gas consumption and cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-quality SiO2 films with high density and low contraction degrees at low temperatures, suitable for applications requiring high rigidity, such as in semiconductor devices, while reducing the total cost of gas used and avoiding the limitations of high-temperature processing.
Implementation Method 1
supplying second silane-based gas to the surface of the first film, the second silane-based gas having a thermal decomposition temperature lower than a thermal decomposition temperature of the first silane-based gas
Implementation Method 2
supplying an oxidant to the surface of the first film to form a second film on the surface of the first film, the second film including silicon and oxygen
Data Source
AI summary
In one embodiment, a method of manufacturing a semiconductor device includes supplying first silane-based gas to a surface of a first film, the first silane-based gas being aminosilane-based gas. The method further includes supplying second silane-based gas to the surface of the first film, the second silane-based gas having a thermal decomposition temperature lower than a thermal decomposition temperature of the first silane-based gas. The method further includes supplying an oxidant to the surface of the first film to form a second film on the surface of the first film, the second film including silicon and oxygen.