Low-Temperature Substrate Nitridation With Alternating Process Gases
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in forming low-temperature films with high efficiency and minimizing decomposition of processing gases, which affects film quality and speed, especially when using gases with N—N and N—H bonds.
Innovation Solution
A method involving the sequential supply of a first processing gas containing a halogen and a second processing gas with N—N and N—H bonds to a substrate heated to 250° C or lower, with multiple cycles to form a film containing the first element, such as a TiN film, while minimizing gas decomposition and adsorption inhibition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a second processing gas including an N—N bond and an N—H bond is supplied to the substrate, then nitridation of the substrate layer is promoted, but decomposition of the processing gas increases at high temperatures
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperatures (400-700°C) to low temperature (250°C or lower), which fundamentally alters the reaction kinetics. This parameter change suppresses the decomposition of the second processing gas while still enabling effective nitridation of the substrate layer, thereby resolving the contradiction between promoting nitridation and minimizing gas decomposition
Solution Approach 2:
The patent employs periodic alternating supply of the first processing gas (containing halogen) and the second processing gas (containing N—N and N—H bonds). This periodic action allows the substrate surface to be continuously regenerated and reactive, enabling effective nitridation at low temperatures without requiring high gas temperatures that would cause decomposition
2Loss of substance
If processing is performed at low temperature (250°C or lower), then decomposition of processing gas is suppressed, but film formation speed decreases
Solution Approach 1:
The patent applies preliminary action by first supplying the first processing gas containing halogen to the substrate before supplying the second processing gas. This preliminary halogenation treatment modifies the substrate surface to be more reactive toward nitrogen, enabling rapid nitridation at low temperatures and thus maintaining high film formation speed without gas decomposition
Solution Approach 2:
The patent performs multiple cycles of alternating first and second processing gas supply (X times, where X is a natural number). This continuous repetitive action ensures that the nitridation process proceeds efficiently at low temperature throughout the film formation period, maintaining high productivity while suppressing gas decomposition
3Manufacturing precision
If the first processing gas containing halogen is supplied to the substrate, then a first film containing the first element is formed, but adsorption inhibition occurs reducing subsequent gas adsorption
Solution Approach 1:
The patent uses periodic alternating supply of the first processing gas and the second processing gas. After the first processing gas forms the element-containing film layer, the second processing gas is supplied to perform nitridation. This periodic alternation prevents continuous adsorption inhibition by resetting the surface chemistry between cycles, maintaining high gas adsorption efficiency throughout the process
Solution Approach 2:
The patent introduces the second processing gas as an intermediary between the substrate and subsequent processing steps. This intermediary gas performs the nitridation function that would otherwise require direct interaction with the halogen-containing surface, thereby removing the adsorption inhibition effect and enabling efficient subsequent processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach promotes nitridation of the substrate layer, suppresses film formation speed decrease at low temperatures, reduces by-product generation, and enhances film quality by controlled gas supply and temperature management.
Implementation Method 1
supplying a first processing gas containing a first element and a halogen to a substrate... to form a first film containing the first element
Implementation Method 2
supplying a second processing gas including an N—N bond and an N—H bond to the substrate... promotes nitridation of the substrate layer
Data Source
AI summary
Included are: (a) supplying a first processing gas containing a first element and a halogen to a substrate; (b) supplying a second processing gas including an N—N bond and an N—H bond to the substrate; and (c) performing (a) and (b) X times, X being a natural number, in a state where the substrate is heated to a temperature of 250° C. or lower to form a first film containing the first element.