Low-Temperature GaN Layer Deposition to Prevent Substrate Damage
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Solution Overview
Problem
The conventional methods for manufacturing micro LED displays face challenges in productivity and economic feasibility due to the high temperature processes used in forming gallium nitride layers, which can damage substrates and degrade the quality and reliability of display devices.
Innovation Solution
A low-temperature atomic layer deposition (ALD) method is employed to form gallium nitride and gallium arsenide layers on silicon substrates containing germanium, using sequential supply of precursors and exposure to hydrogen-containing plasma, with optional encapsulation to prevent moisture and oxygen penetration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If MOCVD method is used to form gallium nitride layer at high temperature (about 1200°C), then gallium nitride layer can be deposited, but substrate or layer formed on substrate may be damaged
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperature (1200°C) to low temperature (500°C or less) in the ALD process, enabling gallium nitride layer formation without damaging the substrate while maintaining layer quality
Solution Approach 2:
The patent replaces the thermal field-based MOCVD method with a chemical field-based ALD method using sequential precursor supply and plasma treatment, achieving layer deposition at low temperature without mechanical or thermal damage
2Manufacturing precision
If high temperature process is used to form gallium nitride layer, then layer can be formed, but substrate or layer may be damaged degrading light emission quality
Solution Approach 1:
The patent changes the temperature parameter to 500°C or less and uses plasma treatment to achieve proper layer formation without thermal damage, ensuring both layer quality and reliable light emission performance
Solution Approach 2:
The patent introduces plasma as an intermediary to enable chemical reactions and layer formation at low temperatures, avoiding direct thermal contact that would cause damage while ensuring proper layer quality and device reliability
3Manufacturing precision
If conventional pick and place method is used for micro LED transfer, then positioning can be achieved, but productivity and economic feasibility are difficult to ensure
Solution Approach 1:
The patent merges the micro LED fabrication and transfer processes by forming gallium nitride layers directly on the final substrate using ALD, eliminating the need for separate pick-and-place operations and enabling high-volume manufacturing
Solution Approach 2:
The patent creates micro LED structures directly in their final positions on the substrate through low-temperature ALD, bypassing the conventional approach of creating separate LED chips and transferring them, thereby improving productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method prevents substrate damage, reduces manufacturing time and cost, and improves film quality by removing impurities, thereby enhancing the reliability and efficiency of semiconductor devices.
Implementation Method 1
a) sequentially supplying a gallium precursor and a nitrogen precursor at 500° C. or less to form a gallium nitride layer on the silicon substrate or the substrate
Implementation Method 2
b) exposing the gallium nitride layer to hydrogen-containing plasma
Data Source
AI summary
The present invention relates to a layer formation method and, more specifically, to a semiconductor device manufacturing method for forming a semiconductor device through a low-temperature process. The layer formation method according to an embodiment of the present invention is a method for manufacturing a semiconductor device which comprises a silicon substrate containing germanium (Ge) or a substrate on which a silicon layer containing germanium (Ge) is formed, and which comprises an undoped gallium nitride (GaN) layer, an N-type gallium nitride (GaN) layer, an active layer and a P-type gallium nitride (GaN) layer, wherein a step of forming at least one gallium nitride layer from among the undoped gallium nitride (GaN) layer, the N-type gallium nitride (GaN) layer, the active layer and the P-type gallium nitride (GaN) layer comprises the steps of: a) sequentially supplying a gallium (Ga) precursor and a nitrogen (N2) precursor at 500° C. or lower, thereby forming a gallium nitride (GaN) layer on the substrate; and b) exposing the gallium nitride (GaN) layer to a hydrogen-containing plasma, and steps a) and b) are repeated multiple times.