Low-Temperature ALD of Indium Chalcogenide Films with Ammonia
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Solution Overview
Problem
Existing atomic layer deposition (ALD) processes for forming indium chalcogenide films often operate at temperatures outside a defined range, affecting the physical or chemical properties of nearby materials and potentially impairing the operation of electronic devices.
Innovation Solution
Utilizing indium-cyclopentadienyl compounds and ammonia as precursors in the ALD process allows for the formation of indium chalcogenide films at lower temperatures, enhancing reactivity and increasing the growth rate of the films while maintaining device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If higher temperatures are used in ALD to facilitate reactions for forming indium chalcogenide, then reaction efficiency and film formation rate improve, but physical or chemical properties of nearby materials are adversely affected
Solution Approach 1:
The patent changes the temperature parameter from high to low range, enabling the ALD process to proceed at temperatures below 150°C instead of higher temperatures. This parameter change resolves the contradiction by maintaining acceptable film formation rates while eliminating thermal damage to surrounding materials.
Solution Approach 2:
The patent employs a composite precursor system combining indium-cyclopentadienyl compound with specific chalcogenide sources. This composite approach enhances reactivity at lower temperatures, allowing the formation process to proceed efficiently without requiring high thermal energy that would harm surrounding materials.
2Object-affected harmful factors
If lower temperatures are used in ALD to protect surrounding materials, then adverse effects on nearby materials are reduced, but reaction efficiency and film formation rate decrease
Solution Approach 1:
The patent modifies the chemical parameters of the precursors used in ALD. Specifically, it employs indium-cyclopentadienyl compounds which have enhanced reactivity characteristics, allowing the reaction to proceed at lower temperatures (below 150°C) while maintaining acceptable film formation rates. This chemical parameter change compensates for the reduced thermal energy availability.
Solution Approach 2:
The cyclopentadienyl ligand acts as an intermediary that facilitates the reaction between indium and chalcogenide at lower temperatures. This intermediary compound enhances the reactivity of the indium source, enabling the ALD process to proceed efficiently without requiring high temperatures that would harm surrounding materials.
3Stability of the object's composition
If reaction temperatures are maintained within a defined range for extended duration, then material properties are preserved, but the likelihood of errant behavior or device malfunction increases
Solution Approach 1:
The patent enables the ALD process to complete the film formation reaction quickly at lower temperatures using highly reactive precursors. This approach rushes through the critical reaction phase before thermal damage can accumulate, completing the deposition in sufficient time to form quality films without exposing surrounding materials to prolonged thermal stress that would cause errant behavior.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The lower temperature process reduces adverse effects on surrounding materials, improves processing capabilities of electronic devices by decreasing response times and enhancing user experience through improved material properties of memory cells.
Implementation Method 1
performing ALD may include exposing the first material to a first precursor to form a second material on the first material. Additionally, performing ALD may include exposing the second material to a second precursor, where the second precursor may react with the second material to leave a third material on the surface of the first material
Data Source
AI summary
Methods, systems, and devices for forming an indium chalcogenide film are described. Precursors that include an indium-cyclopentadienyl compound may enable formation of indium chalcogenide films at a lower temperature as compared to other precursors including indium, as the reactivity of indium-cyclopentadienyl compounds may be higher than these other precursors. Additionally, using ammonia as a reagent during the atomic layer deposition process to form the indium chalcogenide film may enable an increased rate of formation of indium chalcogenide films for a given temperature. A method may include reacting an indium-cyclopentadienyl precursor and a second precursor that includes a selenium compound or a tellurium compound to form an indium chalcogenide.