Low-Temperature Plasma ALD of Metal Films for Smooth Conductive Fill
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Solution Overview
Problem
Existing semiconductor device fabrication processes face challenges in achieving smooth morphology and low resistivity in ultra-thin conductive films due to rough film surfaces and voids, particularly when depositing metals like molybdenum or copper using conventional plasma enhanced atomic layer deposition methods.
Innovation Solution
A reduced-temperature plasma enhanced atomic layer deposition process is employed, where a substrate is exposed to a metal precursor and plasma generated from a hydrogen-containing gas source, either directly or remotely, at temperatures of 300°C or lower, allowing for the formation of elemental metal films with improved morphology and reduced resistivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma enhanced atomic layer deposition is used to deposit metal films, then the deposition process can be completed, but the film morphology becomes rough and resistivity increases
Solution Approach 1:
The patent changes the temperature parameter from conventional higher temperatures to reduced temperatures (300°C or lower), which fundamentally alters the deposition process to produce smoother film morphology and lower resistivity while maintaining the plasma enhanced ALD mechanism
2Manufacturing precision
If conventional deposition processes are used, then metal films can be deposited, but voids form in the conductive fill metal
Solution Approach 1:
By changing the temperature parameter to 300°C or lower, the deposition process produces more uniform films without voids, improving both morphology and structural integrity of the conductive fill metal
3Manufacturing precision
If conventional deposition processes are used, then metal films can be deposited, but pinch-off of fill metal occurs in features
Solution Approach 1:
The reduced temperature parameter (300°C or lower) enables continuous fill metal deposition without pinch-off, ensuring complete and uniform conductivity throughout the features
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process results in smoother film surfaces and lower resistivity, effectively addressing the issues of rough morphology and voids in ultra-thin conductive films, enhancing the quality of semiconductor devices.
Implementation Method 1
the vapor phase metal precursor adsorbs onto the surface of the substrate to form an adsorbed metal precursor
Implementation Method 2
exposing the substrate to plasma generated directly or plasma generated remotely from a hydrogen-containing gas source
Implementation Method 3
the plasma generated remotely from a hydrogen-containing gas source converts the adsorbed metal precursor to elemental metal
Implementation Method 4
depositing metals such as molybdenum or copper to form ultra-thin conductive films
Data Source
AI summary
Provided are reduced-temperature plasma enhanced atomic layer deposition processes including application of a thin metal layer by contacting a substrate surface at temperatures of 300° C. or lower with a metal precursor and a plasma of a hydrogen-containing gas source generated directly or remotely.