Low-Temperature Thermal Deposition of Silicon Films Without Plasma Damage
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Solution Overview
Problem
Current methods for low-temperature deposition of silicon dioxide (SiO2) and silicon oxycarbide (SiOC) films face challenges such as high plasma reactivity, substrate damage, poor conformality, and impractically slow deposition rates, especially in complex geometries and temperature-sensitive materials, limiting their industrial applicability.
Innovation Solution
A thermal atomic layer deposition process using low-water content hydrogen peroxide alternately with silicon-containing compounds at temperatures between 0°C to 150°C to form silicon- and oxygen- or silicon- and carbon-containing films, ensuring deposition rates compatible with current high-temperature processes without substrate damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If plasma-based processes are used for low-temperature deposition, then deposition temperature is reduced, but substrate damage occurs and conformality is limited due to line-of-sight issues
Solution Approach 1:
The patent replaces the plasma-based chemical reaction mechanism with a thermal vapor deposition mechanism. By using heated precursor gases that decompose and react thermally on the substrate surface, the process eliminates plasma-related substrate damage while maintaining low-temperature operation capability.
Solution Approach 2:
The patent changes the fundamental reaction mechanism parameter from plasma-excited reactions to thermally-driven vapor-phase reactions. This parameter change allows the process to operate without plasma damage while achieving conformal deposition through vapor diffusion and surface reaction mechanisms.
2Manufacturing precision
If traditional thermal CVD or ALD is used, then film quality is high, but processing temperature is too high for temperature-sensitive substrates
Solution Approach 1:
The patent changes the reaction mechanism from high-temperature thermal decomposition to low-temperature vapor-phase surface reactions. By using precursors that decompose and react at lower temperatures through vapor-phase transport and surface-mediated reactions, the process maintains film quality while reducing processing temperature to be compatible with temperature-sensitive substrates.
3Object-generated harmful factors
If ozone is used as oxidant, then oxidation capability is strong, but carbon is removed from the film which is undesirable in many applications
Solution Approach 1:
The patent changes the oxidant parameter from strong oxidants like ozone to weaker oxidants such as oxygen plasma or air. This parameter change provides sufficient oxidation capability for film formation while being less aggressive in removing carbon, thereby preserving the desired carbon content in the deposited films for applications requiring carbon-containing materials.
4Adaptability or versatility
If plasma-based ASD process is used, then selective deposition is achieved, but the process is complex and requires multiple steps including etching
Solution Approach 1:
The patent extracts the etching step from the deposition process by using thermal vapor deposition with chemically inert or mild precursors that do not require subsequent etching to remove unwanted material. The selectivity is achieved through controlled surface reactions and precursor decomposition rather than plasma etching, thereby simplifying the overall process.
Solution Approach 2:
The patent implements a continuous thermal vapor deposition process where precursor gases continuously flow and react on the substrate surface without interruption for etching steps. This continuous action maintains selective deposition capability while eliminating the discontinuous nature of plasma-based multi-step processes, thereby reducing overall process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves deposition rates greater than 0.3 Å/cycle with cycle times under 120 seconds, suitable for industrial applications, and maintains film characteristics without aggressive oxidants or plasmas, enabling conformal coating on complex geometries and temperature-sensitive substrates.
Implementation Method 1
performing a thermal atomic layer deposition process on the substrate to form a silicon- and oxygen-containing layer on the substrate by alternately exposing the substrate to at least one silicon-containing compound and low-water content hydrogen peroxide
Implementation Method 2
A thermal atomic layer deposition process using low-water content hydrogen peroxide alternately with silicon-containing compounds at temperatures between 0°C to 150°C to form silicon- and oxygen- or silicon- and carbon-containing films
Data Source
AI summary
Provided are methods for low temperature thermal deposition of silicon-containing films. The methods provide selective deposition on a variety of substrates with high deposition rates and short cycle times.