Low Viscosity Resin Trace for Semiconductor Miniaturization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices with high viscosity sealing resins face challenges in miniaturization due to thick resin traces and inflexible resin portions, which restrict product size reduction and lead to issues like cracking and air bubbles, affecting electrical insulation and reliability.
Innovation Solution
A semiconductor device with a low viscosity sealing resin applied along one longitudinal side of the semiconductor element, forming a resin trace with a width of 0.1 to 1.0 mm and thickness not exceeding 10 μm, allowing for flexible resin regions and reduced outer dimensions, while preventing cracking and air bubble entrapment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high viscosity sealing resin is applied along four sides of the semiconductor chip, then the gap between the semiconductor chip and the flexible wiring substrate is filled, but a thick resin trace of 30 μm to 50 μm or more is formed
Solution Approach 1:
The patent changes the viscosity parameter of the sealing resin from high viscosity to low viscosity (10 to 1000 cP), enabling the resin to flow and fill the gap between the semiconductor chip and flexible wiring substrate without forming a thick trace, thereby reducing the resin trace thickness to 10 μm or less while maintaining reliable gap filling
Solution Approach 2:
Instead of applying resin along all four sides of the semiconductor chip as in conventional methods, the patent applies the low viscosity sealing resin along only one longitudinal side, allowing the resin to flow and fill the gap through capillary action while minimizing the resin trace width to 0.1 to 1.0 mm
2Volume of moving object
If the resin trace thickness is reduced to enable miniaturization, then the device size is reduced, but the resin may become inflexible and crack
Solution Approach 1:
The patent changes the viscosity parameter of the sealing resin to low viscosity (10 to 1000 cP), which enables the resin to form a thin trace of 10 μm or less thickness while maintaining flexibility and preventing cracking, thus resolving the contradiction between miniaturization and structural integrity
3Reliability
If the resin application pattern is optimized for flowability, then the resin fills the gap effectively, but the resin trace thickness increases to 30 μm to 50 μm or more
Solution Approach 1:
The patent changes the viscosity parameter of the sealing resin to low viscosity (10 to 1000 cP), which allows the resin to flow effectively into the gap between the semiconductor chip and flexible wiring substrate while minimizing the resin trace thickness to 10 μm or less, thereby achieving both effective gap filling and thin trace formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a smaller, more flexible semiconductor device with improved electrical insulation and reliability by reducing the inflexible resin region, enabling miniaturization and enhanced manufacturing efficiency.
Implementation Method 1
The sealing resin flows between the semiconductor chip 104 and the flexible wiring substrate by capillary phenomenon, thereby eliminating any empty space therebetween
Data Source
AI summary
A semiconductor device such as a COF or the like is provided on a semiconductor chip on a film-like shaped flexile wiring substrate on which a wiring pattern is formed. Between the semiconductor chip and the flexile wiring substrate, a sealing resin is filled for protecting the semiconductor chip. In the semiconductor device, a resin trace is 0.1 to 1.0 mm in width and 10 μm in thickness, the resin trace being formed when applying the sealing resin along a longitudinal side of the semiconductor chip.


