Low-Voltage Level Shifter With Overvoltage Protection

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Solution Overview

Problem

Conventional level shifter designs face electrical overstress issues due to the lack of support for high voltage transistors in newer technology nodes, particularly when transitioning between 1.8V I/O voltage domains and 0.75V core voltage domains, as seen in FinFET technology nodes, leading to device overstress problems.

Innovation Solution

A voltage level-shifting circuit incorporating a transistor overvoltage protection circuit with 1.5V rated PMOS and NMOS transistors, along with a supply loss protection circuit, is employed to safely transition signals between the I/O and core voltage domains, using a second voltage supply lower than the I/O voltage level and enabling signals to manage transistor operation within safe voltage ranges.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If higher voltage devices are used to support 1.8V I/O voltage domain, then voltage level shifting capability is improved, but device availability deteriorates due to lack of support in newer FinFET technology nodes

Engineering Contradiction:
Improvevoltage level shifting capabilityVSAvoiddevice availability
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent changes the voltage parameter of the transistors from high voltage (1.8V) to low voltage (1.5V rated) devices. By modifying the voltage rating parameter and implementing protection circuits, the design adapts to newer FinFET technology nodes that no longer support high voltage transistors, while still achieving the required voltage level shifting functionality between I/O and core domains.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If 1.5V rated transistors are used instead of higher voltage devices, then device compatibility with newer technology nodes is improved, but electrical overstress risk increases when operating in 1.8V I/O voltage domain

Engineering Contradiction:
Improvedevice compatibilityVSAvoidelectrical overstress risk
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary protective actions by implementing overvoltage protection circuits and supply loss protection circuits before the electrical overstress can occur. These protection mechanisms are designed in advance to prevent voltage exceeding the 1.5V rating of the transistors, thereby eliminating the harmful effect of electrical overstress while maintaining compatibility with newer technology nodes.

Inventive Principle:
Principle #9Preliminary anti-action

Solution Approach 2:

The patent introduces intermediary protection circuits that mediate between the 1.8V I/O voltage domain and the 1.5V rated transistors. These intermediary circuits ensure that the transistors never experience voltage beyond their rated tolerance, effectively isolating them from harmful overvoltage conditions while still enabling voltage level shifting functionality.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Device complexity

If conventional level shifter designs are implemented without protection circuits, then circuit simplicity is improved, but reliability deteriorates due to transistor overstress in cross-domain operations

Engineering Contradiction:
Improvecircuit simplicityVSAvoidtransistor reliability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent implements beforehand cushioning by adding protection circuits that cushion the transistors against overvoltage stress before it can cause damage. The overvoltage protection circuit and supply loss protection circuit are designed to activate preemptively, protecting the transistors during cross-domain voltage transitions and supply voltage fluctuations, thereby significantly improving reliability.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS11923852B2High to low level shifter architecture using lower voltage devices
Publication Date: 2024.03.05 ADVANCED MICRO DEVICES INC
  • US11923852B2 patent drawing
  • US11923852B2 patent drawing
  • US11923852B2 patent drawing

AI summary

A voltage level-shifting circuit for an integrated circuit includes an input terminal receiving a voltage signal referenced to an input/output (I/O) voltage level. A transistor overvoltage protection circuit includes a first p-type metal oxide semiconductor (PMOS) transistor includes a source coupled to the second voltage supply, a gate receiving an enable signal, and a drain connected to a central node. A first n-type metal oxide semiconductor (NMOS) transistor includes a drain connected to the central node, a gate connected to the input terminal, and a source connected to an output terminal. A second NMOS transistor includes a drain connected to the input terminal, a gate connected to the central node, and a source connected to the output terminal.