Low-Voltage Reference Voltage Circuit With PTAT-CTAT Compensation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing reference voltage generator circuits face challenges in achieving high accuracy at low power supply voltages due to offset errors and temperature non-linearity, particularly when operating below the bandgap voltage of silicon.

Innovation Solution

A voltage generator circuitry is designed using bipolar transistors with common base electrodes, current mirror circuits, differential amplifiers, and a current-voltage conversion circuit, which cancels temperature-dependent effects by generating PTAT and CTAT currents, and adjusts resistor ratios to reduce temperature dependence and exclude offset voltage influences.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a bandgap voltage reference circuit is used to achieve high accuracy, then measurement precision is improved, but the power supply voltage requirement increases (cannot operate below bandgap voltage)

Engineering Contradiction:
Improvereference voltage accuracyVSAvoidpower supply voltage requirement
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The patent changes the operating parameters by using bipolar transistors with different emitter areas to generate PTAT and CTAT voltage components that can be combined to achieve a reference voltage lower than the traditional bandgap voltage while maintaining high accuracy through temperature compensation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent combines PTAT (proportional to absolute temperature) and CTAT (complementary proportional to absolute temperature) voltage components from bipolar transistors to create a composite reference voltage that operates below the bandgap voltage while canceling temperature dependence effects

Inventive Principle:
Principle #40Composite materials

2Stability of the object's composition

If bipolar transistors are used to generate PTAT and CTAT components, then temperature compensation is improved, but manufacturing precision requirements increase due to non-linearity

Engineering Contradiction:
Improvetemperature stabilityVSAvoidtransistor matching precision
Core Design Contradiction:
Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The patent applies local quality by using bipolar transistors with specifically designed different emitter areas to generate the required PTAT and CTAT components, where each transistor's local geometric property is optimized for its specific function in the temperature compensation scheme

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses feedback through the combination of PTAT and CTAT voltage components to automatically compensate for temperature variations, where the temperature-dependent effects are fed back and canceled to maintain stable reference voltage output

Inventive Principle:
Principle #23Feedback

3Measurement precision

If error amplifier offset is excluded to improve accuracy, then measurement precision is improved, but circuit complexity increases

Engineering Contradiction:
Improvereference voltage accuracyVSAvoidcircuit configuration complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the error amplifier component from the traditional bandgap reference circuit, using direct bipolar transistor configurations to generate and combine PTAT and CTAT voltages without requiring offset-prone amplifying stages

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The circuitry achieves high accuracy and operates on a power supply voltage lower than the bandgap voltage, suppressing accuracy deterioration from temperature non-linearity and offset errors, with improved output voltage stability across temperature ranges.

Implementation Method 1

A reference voltage generator circuitry using a bandgap voltage of semiconductor is configured to cancel the temperature dependence by adding together a PTAT (proportional to absolute temperature) component of a voltage or current, which increases proportionally to the absolute temperature, and a CTAT (complementary proportional to absolute temperature) component of a voltage or current, which decreases proportionally to the absolute temperature

Methodology Applied
Scientific EffectTemperature dependence of bipolar transistor characteristics:

Implementation Method 2

The current-voltage conversion circuitry converts the sum current of the first and second currents into an output voltage

Methodology Applied
Scientific EffectOhm's law: Ohm's Law

Data Source

PatentUS11092991B2System and method for voltage generation
Publication Date: 2021.08.17 SYNAPTICS INC
  • US11092991B2 patent drawing
  • US11092991B2 patent drawing
  • US11092991B2 patent drawing

AI summary

A voltage generator circuitry includes first to third bipolar transistors having commonly-connected base electrodes, first and second current mirror circuitries, first and second differential amplifiers; a first resistor; and a current-voltage conversion circuitry. The first current mirror circuitry supplies currents to the first to third bipolar transistors and to the current-voltage conversion circuitry. The second current mirror circuitry supplies currents to the first to third bipolar transistors, and s to the current-voltage conversion circuitry. The first and second differential amplifiers control the first and second current mirror. The current-voltage conversion circuitry converts a sum current of the first and second currents into an output voltage.