Lower Contact and Buried Power Structure for Scaled MOSFET Reliability

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Solution Overview

Problem

The increasing demand for high-density semiconductor devices with improved electrical and reliability characteristics is challenging due to the scaling down of metal-oxide-semiconductor field-effect transistors (MOSFETs), which leads to deterioration in operational properties.

Innovation Solution

A semiconductor device and manufacturing method that include a substrate with an active pattern, source/drain pattern, device isolation layer, lower power structure, and power delivery network layer, where the lower contact penetrates the device isolation layer and connects the source/drain pattern to the lower power structure, and a protruding portion is buried in the connecting portion, enhancing electrical connectivity and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If MOSFETs are scaled down to increase device density, then device density increases, but operational properties deteriorate

Engineering Contradiction:

Improvedevice densityVSAvoidoperational properties

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent introduces a lower contact structure that extends vertically below the substrate surface, transitioning from a planar contact arrangement to a three-dimensional configuration. This vertical extension allows power connections to be established without occupying additional lateral space, thereby maintaining high device density while improving electrical connectivity and reducing resistance that would otherwise worsen with scaling.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The lower contact is formed by extending the contact structure into the substrate before subsequent manufacturing steps are completed. This preliminary formation of the lower contact with its protruding portion embedded in the connecting portion ensures robust electrical connectivity is established early, preventing operational property deterioration in later scaled-down devices.

Inventive Principle:

Principle #10Preliminary action

2Reliability

If conventional contact structures are used, then manufacturing is simpler, but electrical connectivity and reliability are insufficient

Engineering Contradiction:

Improveelectrical connectivityVSAvoidcontact structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The lower contact structure features a protruding portion that is embedded within the connecting portion, creating a nested configuration. This nested design enhances electrical connectivity by ensuring intimate contact between contact layers while maintaining a compact overall structure that does not excessively increase device complexity.

Inventive Principle:

Principle #7Nested doll (Nesting)

Solution Approach 2:

The contact structure is divided into distinct segments: the lower contact with its protruding portion and the connecting portion in the power delivery network layer. This segmentation allows each part to be optimized independently for its specific function while maintaining overall structural integrity and manufacturability.

Inventive Principle:

Principle #1Segmentation

3Productivity

If device density is increased through scaling, then more devices fit in the same area, but manufacturing precision requirements increase

Engineering Contradiction:

Improveintegration densityVSAvoidcontact alignment

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The protruding portion of the lower contact is formed in advance and embedded in the connecting portion before subsequent patterning and fabrication steps. This preliminary action establishes a precise reference structure that guides subsequent manufacturing steps, ensuring accurate alignment even as device dimensions are reduced to increase integration density.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution improves the electrical and reliability characteristics of semiconductor devices by ensuring robust connectivity and preventing damage during subsequent manufacturing steps, thereby increasing yield and integration density.

Implementation Method 1

a lower contact penetrating the device isolation layer and connecting the source/drain pattern to the lower power structure

Methodology Applied

Scientific EffectElectrical Conduction: Conduction (electrical)

Implementation Method 2

the lower contact comprises a protruding portion buried in the connecting portion

Methodology Applied

Scientific EffectMechanical Embedment:

Data Source

PatentUS20240312914A1Semiconductor device with lower contact and lower power structure and method of manufacturing the same

Publication Date: 2024.09.19 SAMSUNG ELECTRONICS CO LTD

AI summary

Disclosed are a semiconductor device and a method of manufacturing the same. The semiconductor device may include: a substrate comprising an active pattern; a source/drain pattern on the active pattern; a device isolation layer at a lateral side of the active pattern; a lower power structure below a top surface of the substrate; a lower contact penetrating the device isolation layer and connecting the source/drain pattern to the lower power structure; and a power delivery network layer below the top surface of the substrate, wherein the lower power structure comprises a connecting portion connected to the lower contact, and wherein the lower contact comprises a protruding portion buried in the connecting portion.