Lower Contact Conductive Layer Gradient for Semiconductor Reliability
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Solution Overview
Problem
As semiconductor devices are scaled down, their operating characteristics deteriorate due to increased integration, leading to challenges in achieving superior performance and reliability.
Innovation Solution
A semiconductor device is fabricated with a substrate including an active pattern, source/drain pattern, active contact, lower power line, and a conductive layer composed of silicon and a transition metal or metalloid, where the concentration of the first element decreases from the lower contact toward the lower power line, enhancing electrical properties and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If MOSFET sizes are scaled down to increase integration, then device density increases, but operating characteristics deteriorate
Solution Approach 1:
The conductive layer uses a non-uniform concentration distribution of the first element, with higher concentration near the lower contact and lower concentration toward the lower power line. This local variation optimizes electrical properties at different positions within the same structure, reducing contact resistance where needed while maintaining overall device performance.
Solution Approach 2:
The invention changes the concentration parameter of the first element within the conductive layer to optimize electrical properties. By adjusting the concentration of the first element (transition metal or metalloid) in the silicon-based conductive layer, the patent achieves reduced resistivity and improved contact characteristics without requiring complete device scaling.
2Ease of manufacture
If the conductive layer uses uniform composition, then manufacturing is simpler, but electrical properties are suboptimal
Solution Approach 1:
The conductive layer employs a composition gradient with the first element concentrated near the lower contact and decreasing toward the lower power line. This local quality variation optimizes electrical conductivity at the contact interface while maintaining manufacturability through controlled deposition or diffusion processes.
Solution Approach 2:
The conductive layer is formed as a composite material consisting of silicon combined with a first element (transition metal or metalloid). This composite structure leverages the beneficial properties of both materials - silicon's semiconductor characteristics and the first element's ability to reduce resistivity when present in optimized concentrations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device exhibits improved electrical properties and increased reliability due to the reduced resistivity of the lower contact and increased contact area between the power line and contact, leading to enhanced performance.
Implementation Method 1
a conductive layer between the lower contact and the lower power line. The conductive layer may include silicon (Si) and a first element
Data Source
AI summary
A semiconductor device may include a substrate including an active pattern, a source/drain pattern on the active pattern, an active contact on the source/drain pattern; a lower power line in the substrate, a lower contact that vertically connects the active contact to the lower power line, a conductive layer between the lower contact and the lower power line, and a power delivery network layer on a bottom surface of the substrate. The conductive layer may include silicon (Si) and a first element. The first element may include a transition metal or a metalloid. A concentration of the first element may decrease in a direction from the lower contact toward the lower power line.