Lower Electrode Support Layout for High-Capacitance DRAM Stability

Solution Overview

Problem

In semiconductor devices, particularly in DRAMs, there is a challenge in maintaining the structural integrity and capacitance of lower electrodes as they increase in height, which can lead to tilting or collapse, affecting device performance and reliability.

Innovation Solution

The semiconductor device incorporates a plurality of lower electrodes aligned on a substrate with an electrode support that includes penetration patterns. The electrode support has a center region and an edge region with different penetration pattern intervals, which helps in supporting the lower electrodes and maintaining their structural integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the height of the lower electrode is increased to increase the contact area with the dielectric film, then the capacitance of the capacitor increases, but the lower electrode may tilt or collapse

Engineering Contradiction:

ImprovecapacitanceVSAvoidstructural integrity

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

The electrode support structure incorporates penetration patterns with non-uniform spacing: first penetration patterns are spaced at a first interval in a first region, while second penetration patterns are spaced at a second interval in a second region. This local variation in penetration pattern density provides differential support to the lower electrode, preventing tilting and collapse while maintaining the increased height necessary for high capacitance.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The electrode support is segmented into multiple regions with different penetration pattern intervals. The first region has penetration patterns at a first interval, and the second region has penetration patterns at a second interval, creating a segmented support structure that addresses different mechanical requirements in different areas of the lower electrode.

Inventive Principle:

Principle #1Segmentation

2Quantity of substance

If the height of the lower electrode is increased to increase the contact area with the dielectric film, then the capacitance of the capacitor increases, but the structural stability deteriorates

Engineering Contradiction:

ImprovecapacitanceVSAvoidstructural stability

Core Design Contradiction:

Quantity of substanceVSStability of the object's composition

Solution Approach 1:

The electrode support structure incorporates penetration patterns with non-uniform spacing: first penetration patterns are spaced at a first interval in a first region, while second penetration patterns are spaced at a second interval in a second region. This local variation in penetration pattern density provides differential support to the lower electrode, preventing tilting and collapse while maintaining the increased height necessary for high capacitance.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The penetration patterns are pre-formed in the electrode support before the lower electrode is fully assembled. This preliminary structuring of the support with varying penetration intervals prepares the framework to prevent tilting and collapse before the lower electrode is subjected to operational stresses.

Inventive Principle:

Principle #10Preliminary action

3Reliability

If penetration patterns are added to support the lower electrode, then structural integrity is maintained, but device complexity increases

Engineering Contradiction:

Improvestructural integrityVSAvoidelectrode support structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The electrode support structure incorporates penetration patterns with non-uniform spacing: first penetration patterns are spaced at a first interval in a first region, while second penetration patterns are spaced at a second interval in a second region. This local variation in penetration pattern density provides differential support to the lower electrode, preventing tilting and collapse while maintaining the increased height necessary for high capacitance.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The penetration patterns are formed using photolithography and etching processes that replicate the desired pattern across the electrode support. This copying approach allows complex penetration patterns to be created using standard semiconductor manufacturing techniques, reducing the actual complexity of fabrication despite the sophisticated structural design.

Inventive Principle:

Principle #26Copying

Data Source

PatentUS12211891B2Semiconductor devices

Publication Date: 2025.01.28 SAMSUNG ELECTRONICS CO LTD

AI summary

There is provided a semiconductor device capable of improving performance and reliability of a device, by adjusting the arrangement of penetration patterns included in an electrode support for supporting the lower electrode. The semiconductor device includes a plurality of lower electrodes that are aligned with each other on a substrate along a first direction and a second direction different from the first direction, and a first electrode support that supports the lower electrodes, and includes a plurality of first penetration patterns, wherein the first electrode support includes a center region, and an edge region defined along a periphery of the center region, wherein the first penetration patterns include center penetration patterns that are spaced apart by a first interval in the center region, and wherein the first penetration patterns include edge penetration patterns that are spaced apart by a second interval different from the first interval in the edge region.