Lower Electrode Support Patterns for IC Stability

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The challenge in semiconductor manufacturing is to prevent lower electrodes of capacitors in integrated circuits from tilting or collapsing, which can lead to undesired short circuits and compromise the electrical characteristics and reliability of the IC device, especially as device sizes are downscaled.

Innovation Solution

The implementation of an upper support structure with upper spacer support patterns that surround and support the lower electrodes, featuring a design where the width of these patterns decreases towards the substrate, preventing tilting and collapsing, and ensuring adequate separation between electrodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the heights of lower electrodes are increased to improve capacitance, then the capacitance of capacitors is improved, but the lower electrodes may tilt or collapse causing short circuits

Engineering Contradiction:

ImprovecapacitanceVSAvoidstructural stability of lower electrodes

Core Design Contradiction:

ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent introduces upper spacer support patterns as intermediary structures between the upper support pattern and lower electrodes. These spacer patterns provide lateral support to prevent tilting and collapsing of the lower electrodes, enabling increased electrode heights for improved capacitance while maintaining structural stability.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The support structure is segmented into multiple components: upper support pattern, upper spacer support patterns, and lower support pattern. This segmentation allows each component to perform its specific function - the upper support pattern provides overall support, the spacer patterns provide lateral stabilization, and the lower support pattern anchors the structure, collectively preventing electrode collapse.

Inventive Principle:

Principle #1Segmentation

2Reliability

If the aspect ratios of lower electrodes are increased to improve capacitance, then the capacitance of capacitors is improved, but the lower electrodes may tilt or collapse causing short circuits

Engineering Contradiction:

ImprovecapacitanceVSAvoidpositioning precision of lower electrodes

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The upper spacer support patterns act as intermediary structures that provide lateral support during the electrode formation process. This support prevents tilting and positioning deviations of high aspect ratio electrodes, enabling manufacturing of electrodes with improved capacitance while maintaining positioning precision.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The support patterns are formed beforehand to provide cushioning and protection for the lower electrodes during and after formation. This pre-established support structure prevents tilting and collapsing that would otherwise occur with high aspect ratio electrodes, ensuring positioning precision is maintained.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

3Stability of the object's composition

If support structures are added to prevent tilting and collapsing, then the structural stability of lower electrodes is improved, but the device complexity increases

Engineering Contradiction:

Improvestructural stability of lower electrodesVSAvoidcomplexity of support structure

Core Design Contradiction:

Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The upper spacer support patterns serve multiple functions: they provide lateral support to prevent tilting, maintain spacing between electrodes, and support the overall structure. This multi-functionality reduces the need for additional separate support components, thereby limiting the increase in device complexity while achieving improved structural stability.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The support structure merges the upper support pattern with upper spacer support patterns into an integrated system. This merging allows the structures to work together synergistically, providing comprehensive support with a unified design rather than separate independent components, thus controlling device complexity.

Inventive Principle:

Principle #5Merging (Combining)

Data Source

PatentUS11114398B2Integrated circuit device including support patterns and method of manufacturing the same

Publication Date: 2021.09.07 SAMSUNG ELECTRONICS CO LTD

AI summary

An integrated circuit (IC) device includes a lower electrode formed on a substrate, and an upper support structure disposed around the lower electrode and supporting the lower electrode. The upper support structure includes an upper support pattern surrounding the lower electrode and extending in a lateral direction parallel to the substrate, the upper support pattern having a hole through which the lower electrode passes, and an upper spacer support pattern between the upper support pattern and the lower electrode inside the hole and having an outer sidewall in contact with the upper support pattern and an inner sidewall in contact with the lower electrode, wherein a width of the upper spacer support pattern in the lateral direction decreases in a direction toward the substrate. To manufacture an IC device, an upper support pattern is formed on a substrate. An upper spacer support film is formed to cover a sidewall and a top surface of the upper support pattern. A plurality of lower electrodes are formed inside a plurality of holes formed in the upper support pattern. Portions of the upper spacer support film are removed to form a plurality of upper spacer support patterns between the upper support pattern and the lower electrodes, respectively.