LPCVD Chamber Cleaning via External HF Gas Generation
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Solution Overview
Problem
In semiconductor manufacturing, existing cleaning methods using hydrogen fluoride gas can corrode stainless steel supply pipes and cause local damage to processing chambers due to high-temperature reactions, leading to contamination and reduced productivity.
Innovation Solution
A semiconductor manufacturing apparatus and method that generates hydrogen fluoride gas by reacting hydrogen and fluorine gases outside the processing chamber, using a reaction cooling apparatus to cool the gas before introduction, preventing high-temperature reactions and corrosion, and employing multiple gas supply pipes with alternating or dilution gases to control temperature and prevent damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If hydrogen fluoride gas is introduced into the processing chamber for cleaning, then the deposition film can be etched effectively, but the supply pipe corrodes and metal fluorides contaminate the chamber
Solution Approach 1:
The patent generates hydrogen fluoride gas in advance in a reaction chamber outside the processing chamber, allowing the gas to be prepared and then introduced into the processing chamber without continuous high-temperature reaction, thereby preventing corrosion of supply pipes while maintaining cleaning effectiveness
Solution Approach 2:
The patent extracts the hydrogen fluoride gas generation process from the processing chamber and places it in a separate reaction chamber, isolating the corrosive and high-temperature conditions from the processing chamber and its supply pipes, thus preventing corrosion and contamination
2Object-affected harmful factors
If fluorine gas and hydrogen gas are reacted inside the processing chamber to generate hydrogen fluoride gas, then the cleaning can be performed without corroding supply pipes, but the high-temperature reaction causes local damage to the processing chamber
Solution Approach 1:
The patent removes the high-temperature reaction process from the processing chamber by conducting it in a separate reaction chamber, thereby preventing local damage to the processing chamber while still achieving the desired cleaning effect through subsequent introduction of the generated hydrogen fluoride gas
Solution Approach 2:
The patent performs the exothermic reaction in advance in a reaction chamber, allowing the heat to be dissipated before the gas is introduced into the processing chamber, thus avoiding local temperature increase and damage while maintaining the cleaning function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents damage to processing chambers and wafers by cooling the cleaning gas externally, reduces corrosion risk, and maintains stable etching conditions, enhancing productivity and extending component lifespan.
Implementation Method 1
a technique of etching the deposition film by a cleaning gas containing hydrogen fluoride gas (HF)... fluorine gas (F2) and hydrogen gas (H2) are separately introduced into the processing chamber and reacted therein to generate hydrogen fluoride gas (HF)
Implementation Method 2
a reaction cooling apparatus placed outside the processing chamber and configured to generate a cleaning gas by reaction of a combustible gas and a combustion-supporting gas and to cool the cleaning gas
Data Source
AI summary
An LPCVD apparatus is provided with a processing chamber and a reaction cooling apparatus. The reaction cooling apparatus is placed outside the processing chamber and is configured to generate hydrogen fluoride gas by reaction of hydrogen gas and fluorine gas and to cool the hydrogen fluoride gas. The hydrogen fluoride gas cooled by the reaction cooling apparatus is supplied into the processing chamber as a cleaning gas.