LPDDR4 Memory Receiver for Data Strobe Logic Correction

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

LPDDR4 memory devices experience write operation failures due to improper control of data strobe signals by the memory controller, leading to non-compliance with the LPDDR4 standard.

Innovation Solution

A memory device with a receiver circuit that amplifies and adjusts the logic states of data strobe signals using voltage pull-up and pull-down paths to ensure compliance with the LPDDR4 standard, enabling successful write operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the memory controller directly controls data strobe signals for write operations, then the control structure is simple, but the write operation reliability deteriorates due to improper signal control

Engineering Contradiction:
Improvewrite operation reliabilityVSAvoidreceiver circuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent introduces a receiver circuit as an intermediary component between the memory controller and the memory cell array. This receiver circuit includes amplification circuits and logic state adjustment circuits that process the data strobe signals before they reach the memory cells. The intermediary receiver circuit ensures proper signal levels and correct logic states (where inverted data strobe signals have opposite logic states to non-inverted data strobe signals), thereby improving write operation reliability without requiring the memory controller itself to be more complex.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If the data strobe signals are amplified without logic state adjustment, then the signal strength is improved, but the write operation correctness deteriorates due to improper logic states

Engineering Contradiction:
Improvesignal amplitude accuracyVSAvoidlogic state correctness
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The patent segments the signal processing function into two distinct parts: amplification and logic state adjustment. The receiver circuit includes separate amplification circuits that boost the signal amplitude of data strobe signals, and separate logic state adjustment circuits that ensure the inverted data strobe signals have opposite logic states to the non-inverted data strobe signals. This segmentation allows each circuit to specialize in one function, ensuring both signal strength and logic state correctness are achieved independently and reliably.

Inventive Principle:
Principle #1Segmentation

3Adaptability or versatility

If the memory device follows the LPDDR4 standard strictly, then the compatibility is improved, but the tolerance to controller imperfections deteriorates

Engineering Contradiction:
ImproveLPDDR4 standard compatibilityVSAvoidsensitivity to controller signal defects
Core Design Contradiction:
Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

The patent implements beforehand cushioning by having the receiver circuit pre-process and correct data strobe signals before they are used in write operations. The logic state adjustment circuits proactively ensure that inverted data strobe signals have the correct opposite logic states relative to non-inverted data strobe signals, anticipating and preventing potential write operation failures. This cushioning approach allows the memory device to maintain strict LPDDR4 standard compatibility while being tolerant of controller signal imperfections, as the receiver circuit compensates for these defects before they can cause harm.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS12444459B2Memory device and method for adjusting logic states of data strobe signals used by memory device
Publication Date: 2025.10.14 NAN YA TECH
  • US12444459B2 patent drawing
  • US12444459B2 patent drawing
  • US12444459B2 patent drawing

AI summary

A memory device is provided, which includes a memory cell array, a control circuit, and an interface circuit. The interface circuit includes a receiver circuit configured to amplify a first data strobe signal and a second data strobe signal received from a memory controller to generate a third data strobe signal and a fourth data strobe signal. In response to a first logic state of the first data strobe signal and a second logic state the second data strobe signal satisfying a predetermined condition, the receiver circuit adjusts a third logic state of the third data strobe signal and/or a fourth logic state of the fourth data strobe signal. The control circuit performs a write operation on the memory cell array according to the write command, the third data strobe signal, and the fourth data strobe signal.