L-Shaped Semiconductor Electrodes for Short Channel Effects
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high reliability, minimizing short channel effects, and maintaining favorable electrical characteristics, especially in miniaturized and highly integrated forms, due to issues like short channel effects and significant characteristic variations.
Innovation Solution
A semiconductor device design featuring a specific structure with overlapping source and drain electrodes, sidewalls, and a gate electrode with a gate insulating layer, utilizing an oxide semiconductor with reduced impurities and oxygen vacancies, and a manufacturing method that includes forming source and drain electrodes in contact with the semiconductor layer, introducing oxygen to form sidewalls, and creating a gate insulating layer that overlaps the semiconductor layer and sidewalls.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistors are miniaturized and highly integrated, then device density and integration are improved, but short channel effects and characteristic variations worsen
Solution Approach 1:
The source and drain electrodes are divided into two parts: a first source/drain electrode overlapping the semiconductor layer and a second source/drain electrode extending beyond to contact the semiconductor layer. This segmentation allows the first electrode to provide electrical connection while the second electrode forms an L-shaped structure with sidewalls that extend the effective channel length, thereby reducing short channel effects and characteristic variations while maintaining high integration density
Solution Approach 2:
The source and drain electrodes are configured in an L-shape arrangement where the first electrode overlaps the semiconductor layer in one dimension while the second electrode extends beyond to contact the semiconductor layer, creating a three-dimensional structure. This dimensional change allows the effective channel length to be extended without increasing the planar footprint, thus reducing short channel effects while maintaining high device integration density
2Length of moving object
If transistors are miniaturized, then device size is reduced, but short channel effects increase
Solution Approach 1:
The L-shaped configuration of source and drain electrodes utilizes three-dimensional space by having the first electrode overlap the semiconductor layer while the second electrode extends beyond to contact it. This creates an effective channel length that is longer than the physical distance between electrode ends, thereby reducing short channel effects in miniaturized devices without increasing the device footprint
Solution Approach 2:
By dividing the source/drain electrode into two segments (first and second electrodes), the invention creates an L-shaped structure where one segment overlaps the semiconductor layer and the other extends to contact it. This segmentation allows the effective channel length to be extended through the vertical dimension, counteracting short channel effects in miniaturized transistors
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a highly reliable semiconductor device with reduced short channel effects, improved electrical characteristics, and minimized characteristic variations, enabling miniaturization and high integration while maintaining stability and performance.
Implementation Method 1
a gate insulating layer provided therebetween
Implementation Method 2
forming the sidewall by introducing oxygen to peripheries of the source electrode and the drain electrode
Data Source
AI summary
A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second source electrode which extends beyond an end portion of the first source electrode to be in contact with the semiconductor layer is formed; a second drain electrode which extends beyond an end portion of the first drain electrode to be in contact with the semiconductor layer is formed; a first sidewall is formed in contact with a side surface of the second source electrode and the semiconductor layer; a second sidewall is formed in contact with a side surface of the second drain electrode and the semiconductor layer; and a gate electrode is formed to overlap the first sidewall, the second sidewall, and the semiconductor layer with a gate insulating layer provided therebetween.