LTPO Display Substrate Active Layer Protection via Inverted Gate Formation
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Solution Overview
Problem
In the manufacturing of low temperature polycrystalline oxide (LTPO) display substrates, the active layer of oxide thin film transistors is prone to contamination and corrosion, leading to instability and performance issues.
Innovation Solution
The proposed solution involves a method for manufacturing a display substrate that includes forming a first thin film transistor with a specific structure, where the active layer is formed after the gate and gate insulating layers, and using oxide semiconductor materials. This structure helps protect the active layer and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the active layer is formed before the gate and gate insulating layers in conventional manufacturing, then the manufacturing process follows traditional sequence, but the active layer is prone to contamination and corrosion during subsequent processing steps
Solution Approach 1:
The patent inverts the traditional manufacturing sequence by forming the gate and gate insulating layers before forming the active layer. This reversal protects the active layer from contamination and corrosion that would occur during subsequent processing steps, directly resolving the technical contradiction between reliability and process complexity.
Solution Approach 2:
The gate and gate insulating layers are formed in advance before the active layer is created. This preliminary action establishes a protective structure that prevents contamination and corrosion of the active layer during manufacturing, improving reliability without significantly increasing overall process complexity.
2Manufacturing precision
If the active layer is formed after the gate structure, then contamination and corrosion are reduced, but additional manufacturing steps are required
Solution Approach 1:
The patent combines multiple functions into the reversed manufacturing sequence. By forming the gate structure first and then the active layer, the process simultaneously achieves precise active layer formation without contamination while maintaining overall manufacturing efficiency through integrated process design.
3Reliability
If conventional manufacturing sequence is used, then process simplicity is maintained, but leakage currents increase due to active layer defects
Solution Approach 1:
The inverted manufacturing sequence where the gate is formed before the active layer directly addresses leakage current issues by preventing contamination and corrosion of the active layer. This approach maintains ease of manufacture through a systematic process redesign rather than requiring complex additional steps.
Data Source
AI summary
The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, belongs to the field of display technology. The method includes forming a first thin film transistor, which includes: forming a first gate of the first thin film transistor on a base substrate through a patterning process; forming a first gate insulating layer on a side of the first gate distal to the base substrate; sequentially forming a first semiconductor material layer, a second gate insulating layer and a second gate metal layer on a side of the first gate insulating layer distal to the base substrate, and forming a pattern including an active layer of the first thin film transistor, a pattern of the second gate insulating layer and a second gate of the first thin film transistor through a patterning process.