LTPS Backplane Crystal Quality Detection via Diffraction Imaging
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Solution Overview
Problem
The low yield and high production costs in the AMOLED industry are primarily due to poor quality Low Temperature Poly-silicon (LTPS) backplanes, which result in luminance unevenness and high waste rates, necessitating an effective method for detecting and improving crystal quality.
Innovation Solution
A quality detecting device and method that uses narrowband light to capture diffraction images from LTPS backplanes at specific angles, analyzing diffraction light intensity distributions in multiple axial directions to determine crystal quality, thereby identifying defects and improving yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If LTPS backplane quality is not detected before AMOLED production, then production process continues, but yield decreases due to defective products
Solution Approach 1:
The patent implements preliminary quality detection of LTPS backplanes using light diffraction imaging before they enter the AMOLED production process. By capturing diffraction images at specific angles and analyzing crystal grain arrangements in advance, defective backplanes are identified and rejected beforehand, preventing waste of expensive AMOLED materials and improving overall production yield.
2Measurement precision
If conventional detection methods are used, then detection process is simple, but measurement precision of crystal quality is insufficient
Solution Approach 1:
The patent applies local quality analysis by examining crystal grain arrangements in different regions of the LTPS backplane. The detection system captures diffraction images at multiple positions and analyzes local crystal structures, enabling precise identification of defects in specific areas while maintaining a manageable detection framework.
Solution Approach 2:
The patent enhances measurement precision by analyzing light diffraction in multiple dimensions. By capturing images at different angles (first axial direction and second axial direction) and analyzing the diffraction patterns in both dimensions, the system achieves comprehensive crystal quality assessment that exceeds conventional single-direction detection methods.
3Measurement precision
If multiple detection angles are used, then detection accuracy improves, but detection time increases
Solution Approach 1:
The patent implements periodic detection by capturing diffraction images at specific, predetermined angles (first angle in first axial direction and second angle in second axial direction). This periodic sampling approach provides sufficient measurement precision for crystal quality assessment while controlling the total detection time, avoiding unnecessary continuous multi-angle scanning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for accurate assessment of LTPS backplane quality, reducing waste and enhancing production efficiency by identifying and rejecting defective backplanes before AMOLED production, thus improving yield and reducing costs.
Implementation Method 1
a light source providing narrowband light to the LTPS backplane; a detector performing image capturing of each position on a surface of the LTPS backplane... determining the crystal quality of the LTPS backplane based on a diffraction light intensity distribution
Data Source
AI summary
A device and method for detecting crystal quality of a low temperature poly-silicon (LTPS) backplane are provided, the method including: projecting narrowband light to the LTPS backplane; performing image capturing of each position on a surface of the LTPS backplane at a first angle in a first axial direction to obtain a first diffraction image, the first angle being an angle of maximum diffraction light intensity in the first axial direction; performing another image capturing of each position on the surface of the LTPS backplane at a second angle in a second axial direction to obtain a second diffraction image, the second angle being an angle of maximum diffraction light intensity in the second axial direction; and determining the crystal quality of the LTPS backplane based on a diffraction light intensity distribution obtained from the first and second diffraction images.