LTPS-IGZO TFT Display Structure for Low-Leakage Process Integration
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Solution Overview
Problem
Current display manufacturing processes are complicated due to incompatibility between polycrystalline silicon thin film transistors (TFTs) and metal oxide TFTs, making it difficult to produce display devices that combine both types.
Innovation Solution
A display device with a substrate featuring both low-temperature polycrystalline silicon (LTPS) and indium gallium zinc oxide (IGZO) thin film transistors, utilizing a double-layered oxide semiconductor structure with specific atomic concentration ratios to enhance electrical performance and reliability, and a manufacturing process that includes forming a gate electrode, source, and drain electrodes on the oxide semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a display device combines both polycrystalline silicon TFTs and metal oxide TFTs, then electrical performance and reliability are improved, but manufacturing process complexity increases
Solution Approach 1:
The patent combines polycrystalline silicon TFTs and metal oxide TFTs into a single display device by integrating both transistor types on the same substrate. The manufacturing process merges the fabrication steps for both transistor types, using a unified approach where metal oxide TFTs are formed first as switching transistors, followed by polycrystalline silicon TFTs as drive transistors, thereby achieving both high reliability and process integration
Solution Approach 2:
The patent utilizes parameter changes in the semiconductor layers by controlling the thickness, composition, and crystalline structure of different semiconductor layers. Specifically, it employs a first semiconductor layer with lower carrier mobility for switching TFTs and a second semiconductor layer with higher carrier mobility for drive TFTs, achieving performance differentiation through parameter optimization rather than completely separate manufacturing processes
2Speed
If polycrystalline silicon TFTs are used, then carrier mobility is improved, but current leakage increases
Solution Approach 1:
The patent applies local quality by using different semiconductor materials in different regions of the display device. Metal oxide semiconductor layers are used specifically in switching TFTs where low leakage is critical, while polycrystalline silicon is used in drive TFTs where high carrier mobility is prioritized. This spatial differentiation of material properties allows each transistor type to optimize its performance for its specific function
Solution Approach 2:
The patent employs composite material structures by combining metal oxide semiconductor layers with polycrystalline silicon layers in a multi-layer configuration. The device utilizes a first semiconductor layer of metal oxide and a second semiconductor layer of polycrystalline silicon, creating a composite structure that leverages the low-leakage properties of metal oxide and the high-mobility properties of polycrystalline silicon in different functional regions
3Object-generated harmful factors
If metal oxide TFTs are used, then current leakage is reduced, but carrier mobility decreases
Solution Approach 1:
The patent applies local quality by using different semiconductor materials in different regions of the display device. Metal oxide semiconductor layers are used specifically in switching TFTs where low leakage is critical, while polycrystalline silicon is used in drive TFTs where high carrier mobility is prioritized. This spatial differentiation of material properties allows each transistor type to optimize its performance for its specific function
Solution Approach 2:
The patent employs composite material structures by combining metal oxide semiconductor layers with polycrystalline silicon layers in a multi-layer configuration. The device utilizes a first semiconductor layer of metal oxide and a second semiconductor layer of polycrystalline silicon, creating a composite structure that leverages the low-leakage properties of metal oxide and the high-mobility properties of polycrystalline silicon in different functional regions
Data Source
AI summary
An electronic device includes: a first substrate; a silicon semiconductor layer disposed on the first substrate; a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first substrate; a first conductive component disposed on the first substrate and electrically connected to the silicon semiconductor layer; and a second conductive component disposed on the first conductive component and electrically connected to at least one of the first oxide semiconductor layer and the second oxide semiconductor layer, wherein the second conductive component is at least partially overlapped with the first oxide semiconductor layer and the first conductive component.