LTPS Backboard Light Blocking Layer UV Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The ultraviolet light exposure during the formation and operation of Low Temperature Poly Silicon (LTPS) backboards adversely affects the properties of thin film transistors (TFTs), leading to reduced stability.
Innovation Solution
Incorporating a light blocking layer above the TFT, which can absorb or shield irradiation light, preventing it from impacting the TFT, thereby enhancing its stability. The light blocking layer can be made of organic or inorganic materials with specific thicknesses to effectively block ultraviolet light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a planarization layer is provided to achieve ultra thinness and low weight, then the display device properties are improved, but ultraviolet light exposure during manufacturing causes TFT stability to deteriorate
Solution Approach 1:
A light blocking layer is introduced as an intermediary component between the TFT and the planarization layer. This layer absorbs or reflects ultraviolet light during manufacturing processes, preventing direct exposure of the TFT to harmful radiation while maintaining the overall structure and function of the display device.
Solution Approach 2:
The light blocking layer is formed on the TFT before the planarization layer is applied. This preliminary protective action ensures that subsequent manufacturing processes involving ultraviolet light exposure (such as photolithography for the planarization layer) do not adversely affect the TFT properties.
2Ease of manufacture
If great amount of exposure is used to remove organic materials in planarization layer, then complete material removal is achieved, but TFT threshold voltage deflection increases
Solution Approach 1:
The light blocking layer serves as a protective intermediary that allows aggressive UV exposure processes to be used for complete planarization layer material removal without causing threshold voltage deflection in the TFT, as the blocking layer absorbs the harmful radiation.
Solution Approach 2:
The patent converts the potentially harmful ultraviolet light exposure into a beneficial process by using it to form the light blocking layer itself, which then protects the TFT during subsequent exposure processes. The UV light that would otherwise harm the TFT is instead used constructively to create its own shield.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The light blocking layer effectively prevents ultraviolet light from affecting the TFT, both during manufacturing and operation, thereby improving the stability and display uniformity of the LTPS backboard and light-emitting devices.
Implementation Method 1
the light absorption layer has a thickness of 200 nm to 440 nm... the light absorption layer, which is configured for absorbing the irradiation light to prevent it from irradiating onto the TFT
Implementation Method 2
the light shielding layer has a thickness of 50 nm to 500 nm... the light shielding layer, which is configured for shielding the irradiation light to prevent it from irradiating onto the TFT
Data Source
AI summary
The present disclosure provides a Low Temperature Poly Silicon (LTPS) backboard, a method for manufacturing the LTPS, and a light-emitting device. The LTPS backboard includes: a base substrate, and a thin film transistor (TFT) and a light blocking layer that are arranged above the base substrate, wherein the light blocking layer is arranged above the TFT, and the light blocking layer is configured for preventing an irradiation light from irradiating onto the TFT.