Self-Luminous Pixel Circuit with Oxide Switching and Ion Isolation
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Solution Overview
Problem
Self-luminous displays, such as OLEDs, experience high power consumption during low-frequency driving due to large leakage currents in transistors, reducing the standby time of devices.
Innovation Solution
Incorporating a pixel circuit with a polycrystalline silicon thin-film transistor and an oxide thin-film transistor, separated by an isolation portion composed of an isolation retaining wall and base, which blocks hydrogen ion diffusion, and using a common electrode layer to reduce voltage drop and improve resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a pixel circuit with transistors is used in a self-luminous display, then the display can be driven, but large leakage currents occur during low-frequency driving, causing high power consumption
Solution Approach 1:
The pixel circuit is divided into two separate transistor structures: a first transistor with a polycrystalline silicon active layer for driving functions, and a second transistor with a semiconductor oxide active layer for switching functions. This segmentation allows each transistor to be optimized for its specific function, with the oxide transistor providing low leakage current for reduced power consumption during low-frequency driving while the polycrystalline silicon transistor maintains driving capability.
Solution Approach 2:
Different materials are used for the active layers of the two transistors to create local quality differences. The polycrystalline silicon active layer provides high carrier mobility for driving functions, while the semiconductor oxide active layer provides low off-state current for switching functions. This local quality differentiation enables the pixel circuit to achieve both driving capability and low power consumption during standby states.
2Reliability
If a polycrystalline silicon thin-film transistor is used in the pixel circuit, then high carrier mobility is achieved, but hydrogen ions can be diffused into adjacent transistors, causing device failure
Solution Approach 1:
An isolation portion is introduced between the first transistor (polycrystalline silicon) and the second transistor (semiconductor oxide). This isolation portion acts as an intermediary barrier that prevents hydrogen ions from the polycrystalline silicon active layer from diffusing into the semiconductor oxide active layer, thereby protecting the second transistor from damage while allowing the first transistor to maintain its high carrier mobility performance.
Solution Approach 2:
The potential harm of hydrogen ion diffusion from the polycrystalline silicon transistor is converted into a benefit by using the isolation portion to contain the hydrogen ions within the first transistor's active layer. The isolation portion transforms the harmful diffusion process into a controlled boundary condition, protecting the second transistor while allowing the first transistor to utilize hydrogen ions for improved carrier mobility through hydrogenation effects.
3Area of stationary object
If transistors are placed close together in a pixel circuit, then device area is reduced, but stress concentration occurs, reducing display flexibility and stability
Solution Approach 1:
The pixel circuit is segmented into distinct regions for the first transistor and second transistor, with the isolation portion creating clear spatial separation. This segmentation allows the transistors to be positioned efficiently within the pixel area while the isolation portion acts as a stress relief structure, preventing stress concentration even when transistors are placed close together. The result is a compact pixel circuit that maintains display flexibility and stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces power consumption during low-frequency driving, increases standby time, and enhances display flexibility and stability by blocking hydrogen ion damage and reducing stress concentration.
Implementation Method 1
The isolation portion is configured at least to block hydrogen ions in the active layer of the first transistor from being diffused into the active layer of the second transistor
Data Source
Figure 1a
Figure 1b~1c
Figure 2a~2b
AI summary
Embodiments of this application provide a display and an electronic device, and relate to the field of display technologies, to improve a problem of large power consumption of a self-luminous display under low-frequency driving. The display includes a plurality of sub pixels, a substrate, a light-emitting device, a pixel circuit, and an isolation portion. The light-emitting device, the pixel circuit, and the isolation portion are disposed on the substrate. The pixel circuit and the light-emitting device are coupled, and are located in the sub pixel. The pixel circuit includes a first transistor and a second transistor. An active layer of the first transistor includes polycrystalline silicon, and an active layer of the second transistor includes a semiconductor oxide. In addition, the isolation portion includes an isolation base and an isolation retaining wall surrounding the isolation base. The active layer of the second transistor is disposed in a groove formed by the isolation retaining wall and the isolation base. The isolation portion is configured at least to block hydrogen ions in the active layer of the first transistor from being diffused into the active layer of the second transistor.