Low Voltage P-Type Transistor Voltage Transfer Circuit
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Solution Overview
Problem
Conventional non-volatile semiconductor memory devices require high resistance transistors for voltage transfer circuits, which are costly and complex to manufacture, and result in larger circuit areas due to the need for high voltage P-type transistors.
Innovation Solution
The use of low voltage P-type transistors with diode circuits having a forward voltage of about the power supply voltage, inserted between the gate and drain of the transistors, to reduce the stress on the transistors and allow for the transfer of high voltage without voltage drop, thereby simplifying the manufacturing process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional high voltage P-type transistors are used in voltage transfer circuits, then voltage transfer without drop is achieved, but manufacturing complexity and cost increase due to high resistance transistor requirements
Solution Approach 1:
The patent segments the voltage transfer function into two parts: a low voltage P-type transistor for control and diode circuits for voltage level management. This segmentation allows each component to operate within its optimal voltage range, avoiding the need for complex high resistance transistors while maintaining voltage transfer capability.
Solution Approach 2:
The diode circuits act as intermediary elements between the low voltage transistor and the high voltage node. These diodes mediate the voltage level transition, protecting the transistor from excessive voltage stress while enabling high voltage transfer through the controlled transistor channel.
2Reliability
If high resistance transistors are manufactured for voltage transfer circuits, then voltage transfer performance improves, but production steps and manufacturing costs increase
Solution Approach 1:
The patent changes the voltage parameter constraints by introducing diode circuits that clamp and manage voltage levels. This allows the use of standard low resistance transistors instead of specialized high resistance transistors, as the diodes prevent excessive voltage stress that would otherwise require complex transistor fabrication processes.
3Ease of manufacture
If low voltage transistors are used in voltage transfer circuits, then manufacturing cost and process complexity are reduced, but the ability to transfer high voltage without drop may be compromised
Solution Approach 1:
Diode circuits serve as intermediary components that enable low voltage transistors to control high voltage signals. The diodes manage the voltage levels, ensuring the transistor operates within safe limits while still enabling high voltage transfer through the controlled channel, thus maintaining both manufacturing simplicity and voltage transfer capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the use of low voltage transistors in voltage transfer circuits, reducing manufacturing steps and costs while maintaining the ability to transfer high voltages without voltage drop, thus improving the efficiency and reliability of non-volatile semiconductor memory devices.
Implementation Method 1
a first diode circuit, a forward voltage of which is about the same as the power supply voltage, is inserted between a gate and a drain of the P type transistor
Data Source
AI summary
A non volatile semiconductor memory device wherein it is possible to transfer Vpp without a drop in voltage of the transfer transistor Vth (threshold voltage) in a transfer circuit or decoder circuit for selectively transferring Vpp by using a usual LVP (low voltage P type transistor) to reduce step(s) of production process and costs. An LVP (low voltage P type transistor) instead of a HVP (high voltage P type transistor) for a transfer circuit is used. Two-way diodes each of which threshold value becomes about Vdd are inserted between the gate and the drain.