Programmable Macro Bit-Line Sharing for Voltage Drop Reduction
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Solution Overview
Problem
In large semiconductor devices with high-density programmable macro circuits, the voltage drop across longer bit lines during programming operations is significant, leading to insufficient power supply voltage for effectively programming programmable elements, especially when the macro size is large.
Innovation Solution
Implementing a 1-to-N bit-line sharing scheme where bit lines are shunted to reduce equivalent resistance, improving programming current and reducing the overall resistance of the programming path by resizing programming devices and maintaining the same fuse and macro areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the macro size is increased to accommodate high-density programmable macro circuits, then the integration density is improved, but the voltage drop across bit lines increases leading to insufficient programming current
Solution Approach 1:
The bit line is divided into multiple segments with separate voltage taps at different locations. Each segment can be independently voltage-compensated, allowing the long bit line to be treated as multiple shorter segments. This segmentation enables maintaining sufficient programming current at distant locations without increasing overall macro size.
Solution Approach 2:
Voltage tap circuits are introduced as intermediary components between the voltage source and the programmable elements. These tap circuits provide intermediate voltage compensation points along the bit line, acting as mediators to counteract the voltage drop and ensure adequate programming current reaches distant programmable elements.
2Device complexity
If conventional bit line structures are used in large macro circuits, then the device complexity is reduced, but the voltage drop becomes significant reducing programming effectiveness
Solution Approach 1:
Voltage compensation is performed preliminarily through the voltage tap circuits before the programming operation commences. The tap circuits pre-establish the necessary voltage levels at different locations along the bit line, ensuring that when programming current is applied, the full effective voltage is available throughout the bit line length.
Solution Approach 2:
The voltage tap circuits provide feedback mechanisms that monitor and adjust voltage levels at different positions along the bit line. This feedback ensures that voltage drops are compensated in real-time, maintaining consistent programming effectiveness across the entire macro circuit regardless of size.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The 1-to-N bit-line sharing scheme significantly reduces the equivalent resistance and improves programming current by up to 7%, ensuring effective programming even in large macro circuits with minimal voltage drop.
Implementation Method 1
the voltage drop across longer bit lines during programming operations is significant, leading to insufficient power supply voltage
Data Source
AI summary
The present disclosure provides a semiconductor device and an electrostatic discharge (ESD) clamp circuit. The semiconductor device includes a voltage divider, a cascoded inverter, and a discharge circuit. The voltage divider is electrically coupled between a power supply voltage and an output voltage of the semiconductor device. The cascoded inverter is electrically coupled to the voltage divider. The discharge circuit is electrically coupled to the cascoded inverter. The cascoded inverter is configured to turn on the discharge circuit o discharge an electrostatic discharge (ESD) current in response to an ESD event occurring on the power supply voltage or the output voltage when the semiconductor device is in an ESD mode.