Macro Storage Cell Combining Resistive Devices for Multi-State Memory
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Solution Overview
Problem
Current memory systems are bottlenecked by their inability to store multiple values per cell, limiting the performance of complex computing applications like artificial intelligence and machine vision, as existing memory cells can only store a few bits or discrete states, failing to support true macro-level storage.
Innovation Solution
A macro storage cell design utilizing multiple resistive storage devices in series or parallel, with sense, read, and write circuitry, allowing for a wide range of resistance values to be achieved, enabling the storage of multiple states by combining the resistive states of individual devices, such as resistive multi-level and linear cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple storage devices are combined in a macro storage cell, then the number of storage states increases, but the device complexity increases
Solution Approach 1:
The storage system is divided into multiple independent storage devices (first storage device, second storage device, etc.) that can be individually controlled and read. Each device can be set to different resistance states independently, allowing the macro cell to achieve multiple storage states through combination of individual device states without requiring complex inter-device interactions.
Solution Approach 2:
Multiple storage devices are combined in a macro storage cell where their resistance states are merged to create a multi-state storage system. The macro cell reads and writes to multiple devices simultaneously or sequentially, combining their individual binary or multi-state capabilities to achieve higher overall storage density while maintaining manageable complexity through standardized interface circuits.
2Quantity of substance
If more resistance states are discernible, then storage capacity increases, but manufacturing precision requirements increase
Solution Approach 1:
The system uses binary storage devices (with 2 states) or devices with fewer states than the total macro cell states, combining multiple such simpler devices to achieve the desired high storage capacity. This approach allows manufacturing with lower precision requirements for individual devices while achieving high overall storage capacity through the combination of multiple devices, each manufactured to more achievable precision standards.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively increases the number of discernible resistance states, enabling macro-level storage operations, supporting applications that require a wide dynamic range of weights or values, such as neural networks and machine vision, by maximizing the number of usable resistive states while maintaining manufacturability and cost-effectiveness.
Implementation Method 1
multiple resistive storage devices in series or parallel, with sense, read, and write circuitry, allowing for a wide range of resistance values to be achieved
Data Source
AI summary
An apparatus. The apparatus includes a macro storage cell having a first storage device and a second storage device. The first and second storage devices each able to store more than two states. The macro storage cell to store multiple values resulting from a combination of the respectively stored states of the first and second storage devices.