Magnesium Fluoride Surface Layer for Fluorine Plasma Chamber Components
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Solution Overview
Problem
High-temperature semiconductor manufacturing processes using fluorine radicals can lead to component defects and particle issues due to fluorine deposition on component surfaces, necessitating a method to prevent such problems.
Innovation Solution
A surface treatment method involving high-temperature plasma pretreatment to form a protective magnesium fluoride layer on components, with a magnesium content of 0.5 wt % to 5.5 wt % and a thickness of 100 nm to 300 nm, which prevents fluorine radicals from penetrating and forming aluminum fluoride, thereby extending component lifecycle and reducing particles in the process chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If fluorine radicals are used in cleaning process, then cleaning efficiency is improved, but fluorine deposits on component surfaces causing defects and particles
Solution Approach 1:
A protective layer is introduced as an intermediary between the fluorine radicals and the aluminum component surface. This protective layer selectively allows fluorine radicals to pass through for cleaning purposes while preventing them from reacting with and depositing on the aluminum component, thus resolving the contradiction between cleaning efficiency and fluorine deposition harm
Solution Approach 2:
The surface composition of the component is modified by controlling magnesium content (0.5-5.5 wt%) and forming a magnesium fluoride layer with specific thickness (100-300 nm). These parameter changes enable the surface to differentiate between beneficial fluorine for cleaning and harmful fluorine for deposition, allowing the system to maintain high cleaning efficiency while preventing component damage
2Reliability
If high-temperature plasma treatment is applied, then protective layer formation is improved, but process complexity increases
Solution Approach 1:
The protective layer is formed through preliminary high-temperature plasma treatment before the actual cleaning process. This preliminary action prepares the aluminum component surface with appropriate magnesium content and structure, enabling subsequent fluorine plasma treatment to form the protective layer automatically without requiring additional complex process steps
Solution Approach 2:
The aluminum component with controlled magnesium content serves itself by automatically forming the protective magnesium fluoride layer when exposed to fluorine plasma. The component's own surface composition enables the protective function, eliminating the need for external protective coatings or complex multi-step processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The protective magnesium fluoride layer suppresses aluminum fluoride formation, maintaining surface roughness and process chamber conditions, reducing time-dependent changes and enhancing semiconductor manufacturing efficiency by preventing fluorine radical penetration and maintaining consistent film deposition rates.
Implementation Method 1
generating fluorine plasma with a remote plasma source connected to the first process chamber
Implementation Method 2
forming a protective layer on a surface of the component by providing the fluorine plasma to the first process chamber, wherein the protective layer comprises magnesium fluoride
Implementation Method 3
annealing the component to form, on the bulk layer, a surface region including a higher magnesium content than that of the bulk layer
Implementation Method 4
annealing the component to form, on the bulk layer, a surface region including a higher magnesium content than that of the bulk layer
Data Source
AI summary
A method of surface treatment, includes: providing a component in a first process chamber; generating fluorine plasma with a remote plasma source connected to the first process chamber; and forming a protective layer on a surface of the component by providing the fluorine plasma to the first process chamber, wherein the protective layer comprises magnesium fluoride, wherein a magnesium content of the component is about 0.5 wt % to about 5.5 wt %, and wherein a thickness of the protective layer is about 100 nm to about 300 nm.