Magnesium Germanium Oxide Epitaxy for Deep UV and High-Voltage Semiconductors
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Solution Overview
Problem
Conventional ultrawide bandgap semiconductor materials, such as GaN and SiC, are technologically limiting for applications requiring short UV wavelengths, high efficiency power switching, and solar blind detection, as they struggle to achieve wavelengths shorter than 260 nm and have limitations in electrical breakdown voltage, on-state losses, and switching speed.
Innovation Solution
Development of magnesium germanium oxide (MgxGeyOz) epitaxial layers with specific crystal symmetries and doping strategies to create semiconductor structures with ultrawide bandgaps, enabling direct or indirect bandgap properties suitable for deep UV optoelectronic devices and high-power electronic devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional ultrawide bandgap semiconductor materials (GaN, SiC) are used, then device reliability is maintained, but the ability to achieve wavelengths shorter than 260 nm and high electrical breakdown voltage is limited
Solution Approach 1:
The patent employs composite material structures by integrating magnesium germanium oxide epitaxial layers with specific crystal symmetries onto suitable substrates. This composite approach combines the advantages of different materials to achieve ultrawide bandgap properties (enabling wavelengths below 260 nm) while maintaining device reliability and electrical breakdown voltage performance.
Solution Approach 2:
The patent utilizes parameter changes by systematically varying the compositional parameters (x, y, z) in the magnesium germanium oxide material system MgxGeyOz to optimize the bandgap energy. By adjusting these parameters, the material can be tuned to achieve the desired ultrawide bandgap for sub-260 nm wavelength operation while maintaining compatibility with existing device architectures.
2Ease of manufacture
If conventional semiconductor materials are used, then manufacturing processes are mature, but on-state losses and switching speed are limited
Solution Approach 1:
The patent applies parameter changes by optimizing the compositional parameters of magnesium germanium oxide to achieve the desired balance between on-state resistance and switching characteristics. By carefully controlling the stoichiometry and crystal structure parameters, the material exhibits reduced on-state losses while maintaining compatibility with established epitaxial growth and device fabrication processes.
3Device complexity
If conventional semiconductor materials are used, then device simplicity is maintained, but switching speed and signal gain are limited
Solution Approach 1:
The patent utilizes parameter changes by adjusting the material composition and crystal structure parameters of magnesium germanium oxide to enhance carrier mobility and reduce transit time. These parameter optimizations enable faster switching speeds and improved signal gain while preserving the fundamental device structure and avoiding excessive complexity in the device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnesium germanium oxide materials allow for the production of high-quality semiconductor devices that can emit or detect light in the UV range below 250 nm, enhance electrical breakdown voltage, reduce on-state losses, and increase switching speed, overcoming the limitations of conventional materials.
Implementation Method 1
an epitaxial layer of MgxGe1-xO2-x on the substrate
Data Source
AI summary
Various forms of MgxGe1-xO2-x are disclosed, where the MgxGe1-xO2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of MgxGe1-xO2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.