Magnesium Nitride Buffer Layer for Semiconductor Micro-Wire Growth
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Solution Overview
Problem
Existing opto-electric semiconductor structures based on micro- or nano-wires with direct-gap semiconductor nitrides face challenges due to high interface resistance and the need for nitrogen polarity nucleation, leading to increased operating voltages and costly calibration procedures.
Innovation Solution
A method involving a buffer layer composed mainly of magnesium nitride (Mg x N y) is used to grow semiconductor micro- or nano-wires, reducing interface resistance and ensuring nitrogen polarity nucleation, thereby facilitating the growth of high-quality nitride wires with reduced bias voltage and pyramidal structure avoidance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If aluminum nitride buffer layer is used, then crystalline quality is improved, but interface resistance increases and operating voltage increases
Solution Approach 1:
A magnesium nitride intermediate layer is introduced between the aluminum nitride buffer layer and the gallium nitride micro-wire. This intermediate layer acts as a mediator that reduces interface resistance and facilitates better electrical contact, while the aluminum nitride buffer layer continues to provide crystalline quality improvement through lattice adaptation.
Solution Approach 2:
The buffer structure is transformed from a single material (aluminum nitride) to a composite structure consisting of aluminum nitride and magnesium nitride layers. This composite approach combines the advantages of both materials: aluminum nitride for crystalline quality and lattice matching, and magnesium nitride for lower interface resistance and reduced operating voltage.
2Manufacturing precision
If aluminum nitride buffer layer is used, then crystalline quality is improved, but calibration complexity increases due to polarity requirements
Solution Approach 1:
The magnesium nitride intermediate layer serves as a mediator that simplifies the polarity matching between aluminum nitride and gallium nitride. It provides a transition that reduces the complexity of calibration procedures while maintaining the crystalline quality benefits of the aluminum nitride buffer layer.
3Adaptability or versatility
If direct-gap semiconductor nitride is used for active zone, then opto-electric conversion is enabled, but interface resistance with aluminum nitride buffer increases
Solution Approach 1:
The magnesium nitride intermediate layer acts as a mediator between the direct-gap semiconductor nitride (gallium nitride) and the aluminum nitride buffer layer. It enables effective opto-electric conversion while reducing the interface resistance that would otherwise exist between gallium nitride and aluminum nitride.
Solution Approach 2:
The introduction of magnesium nitride changes the electrical parameters at the interface, specifically reducing the interface resistance. This parameter change allows for better electrical contact while maintaining the opto-electric conversion capabilities of the direct-gap semiconductor nitride.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in semiconductor structures with lower operating voltages, improved crystalline quality, and reduced defect concentrations, enabling efficient emission and detection of electromagnetic radiation while avoiding pyramidal growth and maintaining nitrogen polarity.
Implementation Method 1
forming a buffer layer composed mainly of magnesium nitride (Mg x N y) is used to grow semiconductor micro- or nano-wires, reducing interface resistance
Implementation Method 2
ensuring nitrogen polarity nucleation, thereby facilitating the growth of high-quality nitride wires
Implementation Method 3
semiconductor structures which are suitable for detecting, measuring or emitting electromagnetic radiation
Implementation Method 4
semiconductor structure capable of receiving electromagnetic radiation and converting it into an electrical signal
Data Source
Figure 1~2B
Figure 2C~2D
Figure 2E~2F
AI summary
The invention relates to a method for manufacturing at least one semiconductor micro- or nanowire for forming an optoelectronic structure (10). The method comprises the steps of providing a semiconductor substrate (100), and forming a crystalline so-called buffer layer (110) on the substrate (100), the buffer layer (110) having, on at least a portion of the thickness thereof, a first area (110) mainly consisting of magnesium nitride in the form of MgxNy. The method further comprises the step of forming at least one semiconductor micro- or nanowire (150) on the buffer layer (110). The invention also relates to optoelectronic structures (10) comprising micro- or nanowires (150), and to the method for manufacturing such structures (10).