Magnet-Target Distance Control for Sputter Film Uniformity
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Solution Overview
Problem
Conventional sputter apparatuses struggle to achieve uniform film thickness and resistance distributions due to variations in magnet arrangements and target material erosion, leading to suboptimal film formation.
Innovation Solution
A sputter apparatus with a magnet apparatus and drive mechanism to adjust the distance between the magnet and target, allowing for controlled changes in magnetic field strength and plasma density, enabling two-step film formation processes to optimize film thickness and resistance distributions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a fixed magnet arrangement is used, then the device structure is simple, but the film thickness distribution cannot be adjusted to achieve uniformity
Solution Approach 1:
The magnet apparatus is made movable relative to the target, allowing dynamic adjustment of the magnet-target distance. This enables the magnetic field strength to be varied, thereby controlling plasma density and sputtering rate to achieve uniform film thickness distribution without requiring complex fixed magnet arrangements
Solution Approach 2:
The invention changes the physical parameter of magnet-target distance to control the magnetic field strength. By adjusting this distance, the plasma density and sputtering rate are controlled, enabling optimization of film thickness distribution through parameter variation rather than complex structural design
2Manufacturing precision
If the magnet arrangement is optimized for each target material, then the film thickness distribution can be improved, but the operation time and development time increase
Solution Approach 1:
Instead of requiring separate optimized magnet arrangements for each target material, the invention uses a dynamic magnet-target distance adjustment mechanism. This allows a single magnet apparatus configuration to adapt to different target materials by varying the distance, thereby reducing development time while maintaining optimal film thickness distribution
Solution Approach 2:
The movable magnet apparatus provides universal functionality across different target materials. By adjusting the magnet-target distance, the same apparatus can optimize film formation for various materials without requiring material-specific magnet configurations, significantly reducing development time
3Reliability
If the magnet-target distance is fixed, then the device structure is simple, but the film formation cannot maintain optimal conditions during target erosion
Solution Approach 1:
The magnet-target distance is made dynamically adjustable to compensate for target erosion. As the target erodes during sputtering, the magnet can be moved closer to maintain optimal magnetic field strength and plasma density, ensuring consistent film formation quality throughout the target's operational life
Solution Approach 2:
The system incorporates monitoring of target erosion and adjusts the magnet-target distance accordingly. This feedback mechanism ensures that optimal film formation conditions are maintained throughout the sputtering process, compensating for target wear and maintaining reliable, consistent film quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves adjustable film thickness and resistance distributions, canceling biases and achieving a flat distribution by varying the magnet-target distance, reducing development time and maintaining optimal conditions despite target erosion.
Implementation Method 1
a magnet apparatus that is located on a side opposite to the side where the target of the cathode is attached and forms a magnetic field on a surface of the target
Implementation Method 2
forming a film on the body to be processed by sputtering of the target
Data Source
AI summary
When a film is formed by using a sputter method, distribution variation due to a progress of target erosion generated during the film formation is suppressed, and film thickness distribution and resistance value distribution are corrected to an optimal state. In order to maintain the magnetic flux density formed on the target surface at a constant level, the distance between the target surface and the magnet surface (MT distance) is corrected in accordance with the progress of the target erosion. Further, two or more MT distances are set by a process recipe or the like while forming a thin film, and different distribution shapes are combined to form a near flat distribution shape.