Magnetic Alloy Layer Composition for Magnetoresistance Variation
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Solution Overview
Problem
Current CPP-type magnetic detecting devices face challenges in increasing the product ΔRA between magnetoresistance variation ΔR and device area A, and in reducing the ferromagnetic coupling magnetic field Hin, which affects recording density and waveform asymmetry.
Innovation Solution
The device incorporates magnetic alloy layers with a specific composition formula XaYbZcαd, where the element α is added in a range of 0 to 17.5 at.%, and varies in thickness direction, enhancing bulk scattering and spin-dependent interface scattering, and is formed on interfaces with non-magnetic material layers to decrease ferromagnetic coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional CPP-type magnetic detecting device structures are used, then device size is reduced and reproducing output is increased, but the product ΔRA between magnetoresistance variation and device area cannot be sufficiently increased
Solution Approach 1:
The patent changes the compositional parameters of the magnetic alloy layer by adding element α (where a is Cu and/or Ni) to the base composition XaYbZc, with specific composition ratios (a: 30-70 at.%, b: 10-40 at.%, c: 10-40 at.%, d: 0.1-20 at.%). This parameter optimization increases the product ΔRA while maintaining device structure simplicity.
Solution Approach 2:
The patent creates a composite magnetic alloy layer combining multiple elements (X, Y, Z, and α) where element α (Cu and/or Ni) is added to enhance bulk scattering. This composite structure increases spin-dependent interface scattering and magnetoresistance variation without significantly increasing device complexity.
2Object-affected harmful factors
If fixed magnetic layer and free magnetic layer are closely positioned, then device size is reduced, but ferromagnetic coupling magnetic field Hin increases causing waveform asymmetry
Solution Approach 1:
The patent introduces element α (Cu and/or Ni) as an intermediary component in the magnetic alloy layer. This element has specific magnetic properties that reduce the ferromagnetic coupling between the fixed magnetic layer and free magnetic layer, thereby decreasing Hin and improving waveform symmetry while allowing compact device design.
Solution Approach 2:
The patent optimizes the composition parameters of the magnetic alloy layer by incorporating element α with specific concentration ranges (d: 0.1-20 at.%). This compositional parameter change modifies the magnetic coupling characteristics, reducing Hin without requiring increased device area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases ΔRA significantly while reducing the ferromagnetic coupling magnetic field Hin, enhancing recording density and waveform symmetry.
Implementation Method 1
enhancing bulk scattering and spin-dependent interface scattering
Implementation Method 2
the product ΔRA between a magnetoresistance variation ΔR and a device area A
Implementation Method 3
decreasing a ferromagnetic coupling magnetic field Hin
Data Source
AI summary
A magnetic detecting device and a method of manufacturing the magnetic detecting device are provided. Non-magnetic material layer-side magnetic layers of second fixed magnetic layers form a fixed magnetic layer. Each of the non-magnetic material layer-side magnetic layers and a free magnetic layer is formed of a layer, for example, a CoMnGeCu layer. In the CoMnGeCu layer, a bulk scattering coefficient may become larger, as compared with a CoMnGe layer. As a result, it is possible to increase the product between a magnetoresistance variation and a device area. Further, the ferromagnetic coupling magnetic field can be decreased. The Cu is added by a range which is larger than 0 at. % and not more than 17.5 at. % (average composition ratio).