Magnetic Anneal Batch Oven for Crystal and Domain Alignment
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Solution Overview
Problem
Existing semiconductor processing technologies face challenges in addressing crystal mis-orientation, grain boundary interface issues, lattice strain, and magnetic domain mis-orientation during magnetic material processing, which affect the quality and performance of IC devices.
Innovation Solution
A batch processing oven is designed with a processing chamber, gas inlet and outlet, and a magnet configuration that allows for simultaneous application of a magnetic field and controlled gas flow to enhance substrate heating and cooling, aligning crystal orientation and improving grain boundary interfaces through magnetic annealing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional processing steps (patterning, cleaning, electrode deposition) are used, then manufacturing process is completed, but crystal mis-orientation, grain boundary interface issues, lattice strain, and magnetic domain mis-orientation occur
Solution Approach 1:
The patent combines magnetic field application and thermal processing into a single magnetic annealing step that follows conventional processing. This merged process simultaneously addresses crystal orientation, grain boundary interfaces, lattice strain, and magnetic domain alignment, resolving multiple quality issues that would otherwise require separate corrective steps.
Solution Approach 2:
The patent applies controlled changes in temperature and magnetic field parameters during the annealing process. By varying these parameters systematically, the process repairs crystal orientation, improves grain boundary interfaces, reduces lattice strain, and aligns magnetic domains, thereby improving manufacturing precision without sacrificing productivity.
2Manufacturing precision
If magnetic annealing is applied to repair crystal orientation and improve grain boundaries, then manufacturing precision is improved, but additional processing time and complexity are required
Solution Approach 1:
The patent integrates the magnetic field generation system directly into the existing thermal processing oven structure. This merging of magnetic and thermal processing capabilities into a single unified device adds functionality without proportionally increasing overall system complexity, as the two processes are coordinated through a single integrated control system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oven effectively repairs crystal orientation, improves grain boundary interfaces, and enhances domain alignment, thereby increasing the efficiency and quality of magnetic material processing for semiconductor devices.
Implementation Method 1
The magnet may be configured to have a north pole and a south pole. The north pole may be positioned on the first side of the processing chamber and the south pole may be positioned on the second side of the processing chamber.
Implementation Method 2
The gas inlet may be positioned on a first side of the processing chamber and the gas outlet may be positioned on a second side of the processing chamber, opposite the first side.
Implementation Method 3
the disclosed ovens enables combining magnetic assembly processes and thermal assembly processes to repair crystal orientation, improve grain boundary interface and texture variation, and provide domain alignment
Data Source
AI summary
A batch processing oven includes a processing chamber, a magnet, and a rack. The processing chamber includes a gas inlet on a first side and a gas outlet on a second side opposite the first side, the gas inlet is configured to direct a hot gas into the processing chamber and the gas outlet is configured to exhaust the convective energy in parallel with the radiative energy from the walls. The magnet is arranged such that its north pole will be formed on the first side of the processing chamber and its south pole will be formed on the second side of the processing chamber. The rack is configured to be positioned between the first and second ends of the processing chamber and is configured to support a plurality of vertically spaced-apart substrates.