Magnetic Self-Alignment for Semiconductor Chip Stacking
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Solution Overview
Problem
Current multi-chip stacked package technologies face challenges in reducing the distance between through-vias in substrates due to misalignment issues and limited spacing reduction, hindering the integration and performance of semiconductor devices.
Innovation Solution
The semiconductor device employs through-electrodes with magnetic polarities to facilitate self-alignment using magnetic forces, allowing for reduced via distances and improved integrity by connecting bumps with different magnetic polarity directions between chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical methods are used for multi-chip stacking, then alignment can be achieved, but misalignment occurs and spacing reduction is limited
Solution Approach 1:
The patent replaces optical alignment methods with a magnetic field-based self-alignment mechanism. Through-electrodes with magnetic materials generate magnetic fields that automatically align chips during bonding without requiring optical systems, thereby achieving precise alignment while enabling greater spacing reduction between through-vias.
Solution Approach 2:
The invention implements self-alignment through magnetic fields generated by the through-electrodes themselves. The magnetic materials within the through-electrodes create magnetic fields that automatically guide and align the chips during the bonding process, eliminating the need for external optical alignment equipment and enabling the system to self-correct positioning.
2Quantity of substance
If distance between through-vias is reduced to increase integration, then scaling is improved, but misalignment issues worsen
Solution Approach 1:
By replacing optical alignment with magnetic field-based self-alignment, the patent enables reduced spacing between through-vias while maintaining or improving alignment accuracy. The magnetic fields provide continuous guidance during bonding, ensuring precise alignment even at smaller spacings where optical methods fail.
Solution Approach 2:
The invention changes the alignment mechanism from optical to magnetic field-based, fundamentally altering the physical parameter used for alignment. This parameter change enables operation at smaller through-via spacings while maintaining alignment precision, as the magnetic field range and strength can be adjusted to match the reduced spacing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise self-alignment and reduced distances between through-vias, enhancing the integration and performance of semiconductor devices while improving the integrity of the semiconductor device.
Implementation Method 1
an end of the first through-electrode has a first magnetic polarity on the second surface, and an end of the second through-electrode has a second magnetic polarity opposite the first magnetic polarity on the second surface
Implementation Method 2
a direction of a magnetic field in the first bump is different from a direction of a magnetic field in the second bump
Data Source
AI summary
A semiconductor device includes a first semiconductor chip adjacent a second semiconductor chip. The first semiconductor chip includes a first surface and a second surface. The second semiconductor chip includes a third surface and a fourth surface. The third surface faces the second surface. A first through-electrode and a second through-electrode are between the first and second surfaces. A third through-electrode is between the third surface and the fourth surface and is connected to the first through-electrode. A fourth through-electrode is between the third surface and the fourth surface and is connected to the second through-electrode. An end of the first through-electrode has a first magnetic polarity on the second surface, and an end of the second through-electrode has a second magnetic polarity opposite to the first magnetic polarity on the second surface.