Magnetic Coils in Thinned Silicon Bridges

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Solution Overview

Problem

Semiconductive device miniaturization poses challenges in locating and integrating passive devices effectively, particularly in thinned silicon-bridge regions, where intensive processing is required for interconnection and magnetic coil performance is compromised by proximity to semiconductive material.

Innovation Solution

The integration of a thinned silicon-bridge region with a ferromagnetic layer within a recessed passive-device sector in a semiconductive die, allowing for improved magnetic performance by separating the coil from the semiconductive material while maintaining structural integrity through etching and ferromagnetic layer application.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If passive devices are integrated in thinned silicon-bridge regions, then device miniaturization is achieved, but magnetic coil performance is compromised due to proximity to semiconductive material

Engineering Contradiction:

Improvedevice sizeVSAvoidmagnetic coil performance

Core Design Contradiction:

Volume of moving objectVSReliability

Solution Approach 1:

The silicon die is divided into a first region containing active devices and a second region containing passive devices, separated by a trench. This spatial segmentation isolates the magnetic coil from semiconductive material, improving magnetic performance while maintaining miniaturization through compact regional layout.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The passive device region is extracted and separated from the active device region by forming a trench between them. This extraction removes the harmful interaction between the magnetic coil and semiconductive material, allowing the magnetic coil to operate with improved performance while maintaining integrated device architecture.

Inventive Principle:

Principle #2Taking out (Extraction)

2Strength

If intensive processing is applied for interconnection in thinned regions, then structural integrity is maintained, but manufacturing complexity increases

Engineering Contradiction:

Improvestructural integrityVSAvoidprocessing complexity

Core Design Contradiction:

StrengthVSDevice complexity

Solution Approach 1:

The trench is formed through the substrate before subsequent processing steps. This preliminary action establishes the structural separation early in the manufacturing process, simplifying later interconnection steps and reducing overall manufacturing complexity while maintaining structural integrity.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The trench is selectively formed only in regions where passive devices are located, creating local structural differentiation. This localized approach maintains structural integrity where needed while minimizing unnecessary processing in other regions, thereby reducing overall manufacturing complexity.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances magnetic coil performance by optimizing ferromagnetivity and structural flexibility, enabling efficient integration and performance in miniaturized semiconductive devices without compromising thermal budgets or structural integrity.

Implementation Method 1

Methodology Applied

Scientific EffectFerromagnetism: Ferromagnetism

Data Source

PatentUS11456116B2Magnetic coils in locally thinned silicon bridges and methods of assembling same

Publication Date: 2022.09.27 INTEL CORP

AI summary

A recess in a die backside surface occupies a footprint that accommodates an inductor coil that is formed in metallization above an active surface of the die. Less semiconductive material is therefore close to the inductor coil. A ferromagnetic material is formed in the recess, or a ferromagnetic material is formed on a dielectric layer above the inductor coil. The recess may extend across a die that allows the die to be deflected at the recess.