Magnetic Domain Motion Memory for Multi-Bit Cell Storage
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Solution Overview
Problem
Conventional magnetic random access memories (MRAMs) face limitations in data storage capacity due to their reliance on small resistance differences and large cell sizes, which restrict the ability to store multiple bits of data effectively.
Innovation Solution
The development of a magnetic memory device utilizing a recording layer with switchable perpendicular magnetization directions, a reference layer with a pinned magnetization direction, and a non-magnetic layer, allowing for the storage and reading of multi-bit data through magnetic domain motion, with a recording layer formed from amorphous magnetic materials like TbFeCo alloys, enabling efficient data storage and retrieval.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional MRAM uses GMR with small resistance difference, then device structure is simpler, but data storage capacity is limited and cell size increases
Solution Approach 1:
The invention segments the magnetic recording layer into multiple magnetic domains along the longitudinal direction, where each domain can independently store one bit of data. This segmentation enables multi-bit storage capacity within a single cell structure, resolving the contradiction between simple device structure and limited storage capacity by creating multiple functional units (domains) within the existing GMR cell architecture.
2Device complexity
If conventional MTJ cell stores only one-bit data per cell, then cell structure is simpler, but increases in data storage capacity are limited
Solution Approach 1:
The recording layer is divided into multiple magnetic domains that can be independently controlled and read. Each domain functions as an independent storage unit, allowing the cell to store multiple bits of data simultaneously. This maintains the fundamental MTJ cell structure while multiplying its storage capacity through domain segmentation.
Solution Approach 2:
The invention introduces the spatial dimension of magnetic domain positioning along the longitudinal direction of the recording layer. By encoding data in the position and magnetization state of different domains rather than requiring multiple stacked cells, the system achieves multi-bit storage within a single cell plane, effectively utilizing longitudinal space for information encoding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances data storage capacity and stability by allowing multiple bits to be stored per cell, improving the efficiency of data storage and retrieval processes in magnetic memories.
Implementation Method 1
a recording layer including a plurality of magnetic domains each having a switchable perpendicular magnetization direction and storing and/or reading multi-bit data using a magnetic domain motion
Implementation Method 2
MRAM may use giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) generated as spin, which is a degree of freedom of an electron and has a great influence on electron delivery
Implementation Method 3
MRAM may use giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) generated as spin
Data Source
AI summary
A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.