Magnetic Domain Storage With Perpendicular Trenches
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Solution Overview
Problem
Existing non-volatile information storage devices face challenges with mechanical failures, high manufacturing complexity and cost, power consumption, and limited storage capacity due to moving mechanical systems and switching devices, while magnetic domain wall-based storage devices require stable notch formation which is difficult to achieve with current techniques.
Innovation Solution
The development of information storage devices with a magnetic layer having perpendicular trenches that decrease in width with depth, allowing for more stable and uniform magnetic domain wall movement, formed using a nano imprinting method that facilitates easier fabrication of fine trenches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional exposure and etching techniques are used to form lateral notches, then manufacturing process is simple, but manufacturing precision deteriorates due to inability to form fine-sized notches with uniform interval, size and shape
Solution Approach 1:
The patent replaces conventional mechanical exposure and etching techniques with a magnetic field-based self-organization method. Magnetic domains are induced to spontaneously form notches at desired positions through magnetic field application, eliminating the need for complex lithographic patterning processes while achieving precise sub-10nm notch dimensions with uniform spacing.
Solution Approach 2:
The patent changes the fundamental parameter for notch formation from physical/chemical etching to magnetic field-induced domain wall pinning. By controlling magnetic field strength, duration, and geometry, precise control over notch position, size, and spacing is achieved without requiring complex mask alignment or multi-step etching processes.
2Quantity of substance
If HDDs are reduced in size, then storage density increases, but device complexity and manufacturing cost increase due to mechanical systems
Solution Approach 1:
The patent replaces all moving mechanical components (spinning disks, actuator arms, read/write heads) with a static magnetic layer structure. Data is stored in the form of magnetic domain patterns that can be written and read through magnetic field application without any physical movement, enabling extreme miniaturization while reducing complexity.
Solution Approach 2:
The patent extracts and removes all unnecessary mechanical subsystems from the storage device, retaining only the essential magnetic layer and control circuitry. This extraction of mechanical components enables the device to achieve high storage density in a compact, static form factor.
3Reliability
If lateral notches are formed to control magnetic domain wall movement, then bit-by-bit storage stability improves, but manufacturing precision deteriorates due to difficulty in forming uniform fine notches
Solution Approach 1:
The patent replaces mechanical etching with magnetic field-induced domain wall pinning. Magnetic notches are formed by applying a controlled magnetic field that causes domain walls to pin at specific locations, creating uniform notches with precision determined by field control rather than mechanical tool limitations.
Solution Approach 2:
The magnetic material itself performs the notch formation function through self-organization of magnetic domains under applied field. The magnetic domains automatically arrange themselves to form notches at energy-minimizing positions, eliminating the need for external patterning tools and ensuring uniformity through thermodynamic equilibrium.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the stability and uniformity of bit-by-bit magnetic domain wall movement, increasing the reliability and recording density of the storage devices without the need for moving mechanical systems, while reducing manufacturing complexity and power consumption.
Implementation Method 1
Magnetic regions that make up a magnetic body may be called magnetic domains. A single magnetic domain has identical direction of magnetic moment.
Implementation Method 2
A magnetic domain wall may be a boundary between magnetic domains having different magnetization directions and may be moved by a current and/or a magnetic field applied to a magnetic material.
Implementation Method 3
formed using a nano imprinting method that facilitates easier fabrication of fine trenches
Data Source
AI summary
Example embodiments may provide magnetic domain information storage devices with trenches and a method of manufacturing the information storage device. Example embodiment information storage devices may include a magnetic layer on a substrate having a plurality of magnetic domains and a power unit for moving magnetic domain walls. Magnetic layers may be parallel to the substrate, and a plurality of trenches in the magnetic layer may be perpendicular to the substrate. Portions of a lower surface of the magnetic layer corresponding to trenches may protrude downward.