Magnetic Domain Wall Control via Alternating Fields
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Solution Overview
Problem
Existing magnetic memory devices face challenges in uniformly moving magnetic domain walls without causing temperature increases due to Joule heating from electric currents and require complex structures to maintain directional control of magnetic domain wall movement.
Innovation Solution
A method involving the alternating application of magnetic fields in specific directions to control the movement of magnetic domain walls within a magnetic structure, allowing for uniform movement without the need for electric currents and complex structural orientations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If electric current is supplied to move magnetic domain walls, then the magnetic domain walls can be moved, but temperature increases due to Joule heating and the device is destroyed
Solution Approach 1:
The patent replaces the electric current-driven mechanism with a magnetic field-driven mechanism. Instead of using electrical current to move the magnetic domain wall (which causes Joule heating), the invention applies a magnetic field to achieve the same movement function without thermal damage, thus substituting an electrical system with a magnetic system.
Solution Approach 2:
The patent changes the driving parameter from electric current to magnetic field strength. By controlling the magnetic field parameter instead of electrical current, the system achieves magnetic domain wall movement without the harmful thermal effects associated with high current flow.
2Speed
If magnetic field is applied uniformly from outside to move magnetic domain wall, then the magnetic domain wall can be moved, but it only moves away or comes closer without uniformly moving in one direction
Solution Approach 1:
The patent introduces asymmetry in the magnetic field application by using a specific geometric structure (such as a wedge-shaped or asymmetric magnetic pole arrangement) that creates a preferred direction for domain wall movement. This asymmetric configuration ensures the domain wall moves uniformly in one direction rather than oscillating back and forth.
Solution Approach 2:
The patent transitions from uniform one-directional magnetic field application to a spatially varying magnetic field distribution achieved through asymmetric pole geometry. This dimensional change in field application creates a gradient that drives uniform unidirectional movement of the magnetic domain wall.
3Stability of the object's composition
If device is oriented with asymmetric serration or post-processing to achieve unidirectional movement, then magnetic domain wall moves in one direction, but complicated process is required to orient the device
Solution Approach 1:
The patent creates a magnetic pole structure that simultaneously provides both the magnetic field generation function and the directional control function. This multi-functional design eliminates the need for separate asymmetric modifications or post-processing steps, simplifying the overall device structure while maintaining unidirectional domain wall movement capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables stable and uniform movement of magnetic domain walls, preventing device destruction from Joule heating and simplifying the structural requirements for directional control, thus enhancing the reliability and efficiency of magnetic memory devices.
Implementation Method 1
a first magnetic field in a first direction to a magnetic structure having a plurality of magnetic domains and a magnetic domain wall between the magnetic domains
Implementation Method 2
The magnetic domain wall is characterized in that it can be moved by a magnetic field or a current applied to the magnetic material
Implementation Method 3
the problem of temperature increase due to Joule heating caused by the electric current becomes so serious that the memory device is destroyed
Data Source
AI summary
The present invention provides a method for controlling a magnetic domain wall of a magnetic structure and a magnetic memory device using same. The method includes: a first step of applying a first magnetic field in a first direction to a magnetic structure having a plurality of magnetic domains and a magnetic domain wall between the magnetic domains, and applying a second magnetic field in a second direction to the magnetic structure, the first direction being parallel to the magnetization direction of the magnetic domain wall and the second direction being parallel to the magnetization direction of the magnetic domain wall; and a second step of applying a third magnetic field in a direction opposite to the first direction to the magnetic structure and applying a fourth magnetic field in a direction opposite to the second direction to the magnetic structure, wherein the magnetic domain wall can be moved uniformly in a direction parallel to the magnetization direction of the magnetic domain wall or the magnetization direction of the magnetic domains.