Magnetic Domain Wall Analog Memory Current Controller
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Solution Overview
Problem
Magnetic domain wall type MRAMs face challenges in stably reading analog recording data due to non-linear resistance changes, and existing solutions do not provide a method for applying a read current effectively, leading to unstable information retrieval.
Innovation Solution
A magnetic domain wall type analog memory element is designed with a magnetization fixed layer, a non-magnetic layer, a magnetic domain wall drive layer, and a current controller that allows for controlled current flow between the fixed layer and the drive layer during reading, enabling stable analog data retrieval by managing the magnetization states and resistance changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If data is read using a change in resistance value of a magnetoresistance effect element, then reading function is provided, but the resistance change is non-linear causing unstable reading of analog recording data
Solution Approach 1:
The patent introduces a current controller as an intermediary component between the magnetoresistance effect element and the read circuit. This controller regulates the read current to flow through specific regions (first area or second area) of the magnetic domain wall drive layer, mediating the relationship between the stored analog data and the readout circuitry to achieve linear resistance changes for stable reading
Solution Approach 2:
The magnetic domain wall drive layer is divided into regions with different magnetization orientations (first area with magnetization in first direction, second area with magnetization in second direction). By controlling current flow through specific local regions rather than uniformly across the entire layer, the patent achieves linear resistance changes that enable stable analog data reading
2Quantity of substance
If multiple value recording is implemented to increase memory density, then memory capacity increases, but reading stability deteriorates due to non-linear resistance changes
Solution Approach 1:
The current controller serves as a mediator that enables reliable reading of multiple value recorded data by regulating current flow through specific magnetic domain regions, transforming the non-linear resistance characteristics into linear responses that accurately represent the stored analog values
Solution Approach 2:
The patent changes the parameter of current flow direction and magnitude controlled by the current controller to read different analog values. By varying which region (first or second area) the current flows through, the system can distinguish between different stored values while maintaining reading stability through the controlled linear resistance response
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for stable reading of analog data with multiple values by controlling the current flow and magnetization states, ensuring accurate data retrieval and improved memory performance.
Implementation Method 1
A magnetic domain wall of a magnetic domain wall drive layer is moved based on a spin transfer effect due to spin-polarized electrons
Implementation Method 2
a magnetic domain wall type MRAM reads, as data, a change in resistance value of a magnetoresistance effect element which changes in accordance with a relative relationship between a magnetization direction of a magnetization fixed layer and an average magnetization direction of a central region of a magnetization recording layer
Data Source
AI summary
A magnetic domain wall type analog memory element includes: a magnetization fixed layer in which magnetization is oriented in a first direction; a non-magnetic layer provided in one surface of the magnetization fixed layer; a magnetic domain wall drive layer including a first area in which magnetization is oriented in the first direction, a second area in which magnetization is oriented in a second direction opposite to the first direction, and a magnetic domain wall formed as an interface between the areas and provided to sandwich the non-magnetic layer with respect to the magnetization fixed layer; and a current controller configured to cause a current to flow between the magnetization fixed layer and the second area at the time of reading.