Magnetic Domain Wall Memory Multilayer Structure
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Solution Overview
Problem
Current data storage devices, such as HDDs, face reliability issues due to mechanical wear from rotating parts, and existing memory technologies using magnetic domain wall movement have low data storage density.
Innovation Solution
A memory device is designed with a multilayer structure of magnetic tracks and an interconnecting layer, utilizing materials with specific magnetic anisotropy constants and configurations such as parallel, orthogonal, or crossing tracks to optimize data storage density, employing magnetic domain wall movement for data writing and reading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If magnetic domain wall movement is used for data storage, then mechanical wear is eliminated, but data storage density is low
Solution Approach 1:
The patent transitions from planar magnetic domain structures to vertically stacked multilayer magnetic domains. By stacking multiple magnetic layers in the vertical dimension, the device achieves high data storage density while maintaining the non-mechanical magnetic domain wall movement mechanism, thus preserving reliability while increasing storage capacity
Solution Approach 2:
The patent implements nested magnetic domains within vertically stacked layers, where multiple magnetic domains are arranged in a hierarchical structure. Each layer contains magnetic domains that can be independently controlled, and the stacked layers are interconnected through conductive vias, creating a compact three-dimensional storage architecture that maximizes density
2Quantity of substance
If conventional magnetic storage structures are used, then data storage density can be increased, but device structure becomes complex
Solution Approach 1:
The patent divides the magnetic storage structure into multiple discrete functional layers, each with a specific magnetic anisotropy constant. The structure is segmented into hard magnetic layers for stable domain formation, soft magnetic layers for domain wall movement, and conductive layers for current application. This segmentation allows independent optimization of each layer while maintaining overall structural simplicity through repetitive stacking patterns
Solution Approach 2:
The patent achieves high storage density by systematically varying the magnetic anisotropy constant parameter across different layers. Hard magnetic layers with high anisotropy constants provide stable domain walls, while soft magnetic layers with low anisotropy constants facilitate easy domain wall movement. This parameter optimization across the stacked structure enables high density without requiring complex device architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a high-density data storage capability without mechanical wear, suitable for mobile devices and mass production, with the potential to store terabits/in², and simplifies the device structure for improved reliability and efficiency.
Implementation Method 1
a magnetic domain wall is a region which separates magnetic domains each having different magnetization directions. Such a magnetic domain wall may be moved or propagated by the application of a magnetic field or a current to a magnetic material.
Implementation Method 2
the directions of magnetization of the magnetic domains may be reversed using magnetic fields or currents
Data Source
Figure 1A~1B
Figure 1C~2
Figure 3~4
AI summary
Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.