Magnetic Domain Wall Storage Node Eliminating Buffer Regions
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Solution Overview
Problem
Conventional nonvolatile information storage devices, such as HDDs and flash memories, face issues with reliability due to wear and tear, slow reading/writing speeds, short lifespan, and high manufacturing costs, while magnetic domain wall-based storage devices have inefficient storage capacity and performance due to the need for buffer regions and slow read/write operations.
Innovation Solution
An information storage device utilizing magnetic domain wall movement with a storage node, write unit, read unit, magnetic domain wall moving unit, temporary storage unit, and write control unit, where magnetic domains and domain walls are moved between regions to enhance storage efficiency and speed, allowing for simultaneous reading and writing operations without a buffer region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a buffer region is used to temporarily store information in magnetic domain wall-based storage devices, then information can be read and written, but the effective storage capacity is reduced to about half of the physical storage capacity
Solution Approach 1:
The patent extracts and removes the buffer region from the storage device structure. By eliminating the separate buffer region that was previously needed to temporarily store information during read/write operations, the entire storage node can be used as effective storage space, doubling the effective storage capacity while maintaining reliable operation through direct read/write capability
Solution Approach 2:
The storage node is designed to perform multiple functions directly without requiring a separate buffer region. The same storage node that stores information can also serve as the readout region, eliminating the need for dedicated buffer space and allowing the entire physical structure to contribute to effective storage capacity
2Reliability
If magnetic domains and magnetic domain walls are moved back and forth between storage region and buffer region for read/write operations, then information can be accessed, but reading/writing speeds are reduced
Solution Approach 1:
The patent positions magnetic domains and domain walls in advance within the storage node itself, eliminating the need for preliminary movement to a separate buffer region. Information is directly accessible at the storage node location, enabling faster read/write operations while maintaining operating reliability through the stable magnetic domain structure
Solution Approach 2:
Instead of moving magnetic domains to a buffer region for access and then returning them, the patent inverts the approach by having the storage node itself serve as the access point. This eliminates the back-and-forth movement cycle, dramatically increasing read/write speeds while maintaining reliable operation
3Productivity
If magnetic domains are moved repeatedly between regions for read/write operations, then information can be accessed, but operating reliability and device performance degrade
Solution Approach 1:
The patent segments the storage node into distinct functional regions (storage region, read region, write region) that can be independently controlled. This segmentation allows specific regions to be activated only when needed, reducing unnecessary movement of magnetic domains and thereby improving operating reliability while maintaining full read/write capability
Solution Approach 2:
The patent introduces control circuits as intermediaries that manage the movement and positioning of magnetic domains. These control circuits coordinate read/write operations to minimize unnecessary domain wall movement, reducing degradation from repeated movement while maintaining full operational capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in higher reading/writing speeds, improved reliability, and increased storage density by utilizing the entire storage node as an effective region, simplifying the circuit construction and operation by using currents in fixed directions.
Implementation Method 1
Another conventional information storage device uses the principle of magnetic domain wall motion of a magnetic material... The magnetic domains and the magnetic domain walls may be moved by applying current to a magnetic layer
Implementation Method 2
recording first information by magnetizing the first region in a direction opposite to the first direction by using the write unit
Implementation Method 3
a read unit configured to read information from a second region of the storage node
Data Source
AI summary
An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.