Magnetic Element Semiconductor Structure Against Peeling and Delamination
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in forming reliable semiconductor devices at smaller sizes due to increased complexity and difficulty in fabrication processes as feature sizes decrease, leading to issues like peeling, delamination, and damage to interconnection structures during the formation of magnetic elements.
Innovation Solution
A semiconductor device structure is developed with an adhesive layer between the interconnection structure and magnetic element, followed by a patterned isolation element and conductive lines, which are partially covered by a dielectric layer to reduce stress and prevent damage, ensuring the quality and reliability of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then productivity and production efficiency are improved, but manufacturing complexity and fabrication difficulty increase
Solution Approach 1:
The patent segments the magnetic element formation process into distinct stages: forming a patterned magnetic layer, depositing a protective dielectric layer, and creating isolation structures. This segmentation allows each step to be optimized independently, managing the increased fabrication complexity while maintaining high functional density
Solution Approach 2:
The patent applies preliminary protective actions by forming a dielectric layer over the magnetic element before subsequent processing steps. This preliminary protection prevents damage to the interconnection structure during later fabrication steps, addressing the increased manufacturing complexity inherent in smaller feature sizes
2Reliability
If magnetic elements are formed at smaller sizes, then functional density increases, but peeling and delamination of interconnection structures occur
Solution Approach 1:
The patent introduces an adhesive layer as an intermediary between the interconnection structure and the magnetic element. This adhesive layer acts as a mediator that prevents direct contact between the magnetic element and the interconnection structure, thereby eliminating the peeling and delamination issues that occur at smaller sizes
Solution Approach 2:
The patent applies beforehand cushioning by forming a protective dielectric layer over the magnetic element before subsequent processing steps. This protective layer cushions the magnetic element and interconnection structure against mechanical stresses that would otherwise cause peeling and delamination during fabrication
3Reliability
If interconnection structures are formed closer together to increase density, then functional density increases, but damage to interconnection structures during magnetic element formation increases
Solution Approach 1:
The patent uses the adhesive layer and protective dielectric layer as intermediaries that physically separate the magnetic element formation process from the interconnection structure. This intermediary protection allows interconnection structures to be formed closer together without risking damage during magnetic element fabrication
Solution Approach 2:
The protective dielectric layer is formed beforehand to cushion and protect the interconnection structure from damage during subsequent magnetic element formation steps. This prior cushioning enables higher density interconnection structures while maintaining their integrity during fabrication
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element partially covering the magnetic element. The semiconductor device structure further includes a conductive feature over the isolation element.