Magnetic Element Structure With Hollow Removal for Semiconductor Reliability
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in forming reliable semiconductor devices at increasingly smaller sizes, where the complexity of processing and manufacturing increases due to decreasing feature sizes, leading to difficulties in forming reliable magnetic elements with hollow structures that affect the quality and reliability of the devices.
Innovation Solution
A method is described that involves forming a protective layer and an etch stop layer over a semiconductor substrate, followed by depositing magnetic layers, using a patterned mask to partially remove the magnetic layers, and performing an etching process to remove hollow structures, while also forming isolation elements and conductive lines to improve the quality and reliability of the magnetic elements. A dielectric layer is then formed over the conductive lines, isolation elements, and magnetic elements to reduce thermal stress and enhance device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If magnetic layers are deposited and patterned to form magnetic elements, then the functional density of the semiconductor device is improved, but hollow structures remain within the magnetic elements that reduce manufacturing precision and reliability
Solution Approach 1:
The patent applies the extraction principle by removing the harmful hollow structures from within the magnetic elements through a selective etching process. The etch stop layer is strategically positioned to allow etchants to access and remove the hollow structures while stopping before damaging the underlying semiconductor substrate, thereby extracting the defect without compromising the magnetic element's functional integrity
Solution Approach 2:
The patent applies preliminary action by forming the etch stop layer during the magnetic element fabrication process, before the hollow structures become problematic. This etch stop layer is prepared in advance to enable subsequent removal of hollow structures, ensuring that the mechanism to eliminate defects is already in place before manufacturing issues arise
2Productivity
If feature sizes are decreased to increase production efficiency, then productivity is improved, but the complexity of processing and manufacturing increases making it difficult to form reliable devices
Solution Approach 1:
The patent applies segmentation by dividing the magnetic element structure into multiple functional layers, including the magnetic layers and the etch stop layer. This segmentation allows each layer to serve a specific function - the magnetic layers provide magnetic functionality while the etch stop layer provides a controlled etching barrier - thereby managing the complexity of manufacturing small-scale devices through modular layer design
Solution Approach 2:
The patent applies the intermediary principle by introducing the etch stop layer as a mediator between the magnetic layers and the semiconductor substrate. This intermediary layer facilitates the selective removal of hollow structures by providing a controlled etching interface, thereby simplifying the manufacturing process for small-scale devices by enabling precise structural modification without requiring complex processing steps
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The i magnetic element is wider than the isolation element. The semiconductor device structure further includes a conductive line over the isolation element.