Magnetic Element Structure With Polymer Isolation Against Delamination
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Solution Overview
Problem
The semiconductor industry faces challenges in forming reliable semiconductor devices at smaller sizes due to increased complexity and difficulty in fabrication processes, particularly in forming magnetic elements with hollow structures that can affect the quality and reliability of the devices.
Innovation Solution
A semiconductor device structure is formed using a protective layer and an etch stop layer to protect the interconnection structure during etching, followed by the deposition of magnetic layers and an isolation layer made of polymer material to reduce stress and improve adhesion, which helps in preventing delamination and cracking, and a conductive line is formed over the isolation layer extending across the magnetic element.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If magnetic layers are deposited to form magnetic elements with hollow structures, then the device functionality is improved, but the reliability deteriorates due to delamination and cracking
Solution Approach 1:
An isolation layer made of polymer material is introduced between the magnetic element and surrounding structures as an intermediary component. This isolation layer prevents direct contact and interaction that would cause delamination and cracking, thereby maintaining reliability while preserving the hollow structure functionality.
Solution Approach 2:
The patent uses composite material structures including multiple magnetic layers with different properties (e.g., CoFeB, CoFe) combined with a polymer isolation layer. This composite approach allows the magnetic element to maintain its hollow structure for functionality while the polymer matrix provides mechanical stability to prevent cracking and delamination.
2Productivity
If feature sizes are decreased to increase functional density, then productivity is improved, but manufacturing precision deteriorates due to increased fabrication complexity
Solution Approach 1:
The patent changes material parameters by using polymer materials with specific properties (low stress, good adhesion) for the isolation layer. This parameter selection allows fabrication at smaller feature sizes while maintaining manufacturing precision, as the polymer material compensates for the increased difficulty of working with smaller dimensions.
3Reliability
If stress is reduced in the magnetic element structure, then reliability is improved, but device complexity increases due to additional isolation layer
Solution Approach 1:
The isolation layer performs multiple functions simultaneously: it reduces stress in the magnetic element structure, prevents delamination, provides mechanical support to prevent cracking, and enables the formation of hollow structures. By consolidating these functions into a single layer, the patent improves reliability without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the quality, performance, and reliability of the semiconductor device structure by reducing hollow structures in magnetic elements, improving adhesion, and maintaining the surface condition, leading to improved device performance and reduced stress-related issues.
Implementation Method 1
an isolation layer made of polymer material to reduce stress and improve adhesion
Implementation Method 2
forming a protective layer and an etch stop layer to protect the interconnection structure during etching
Implementation Method 3
deposition of magnetic layers
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.